- Nitride-based photodetectors with unactivated Mg-doped GaN cap layer
[作者:Lam, KT; Chang, PC; Chang, SJ; Yu, CL; Lin, YC; Sun, YX; Chen, CH,期刊:Sensors And Actuators A-Physical, 页码:191-195 , 文章类型: Article,,卷期:2008年143-2]
- Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was ...
- Flexible displacement sensor using injected conductive paste
[作者:Kure, K; Kanda, T; Suzumori, K; Wakimoto, S,期刊:Sensors And Actuators A-Physical, 页码:272-278 , 文章类型: Article,,卷期:2008年143-2]
- This paper reports on the fabrication procedure and the evaluation of a sensor with a flexible structure. Recently, because welfare robots with soft structures are being developed, there has been considerable progress in...
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