- Linking hopping conductivity to giant dielectric permittivity in oxides
[作者:Artemenko, A; Elissalde, C; Chung, UC; Estournes, C; Mornet, S; Bykov, I; Maglione, M,期刊:Applied Physics Letters, 页码:132901-132901 , 文章类型: Article,,卷期:2010年97-13]
- With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for su...
- Investigation of single and multidomain Pb(In0.5Nb0.5)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystals with mm2 symmetry
[作者:Zhang, SJ; Li, F; Luo, J; Xia, R; Hackenberger, W; Shrout, TR,期刊:Applied Physics Letters, 页码:132903-132903 , 文章类型: Article,,卷期:2010年97-13]
- The piezoelectric properties of Pb(In0.5Nb0.5)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystals with various engineered domain configurations were investigated. Rhombohedral and monoclinic/orthorhombic crystals poled along their cry...
- Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
[作者:Timm, R; Fian, A; Hjort, M; Thelander, C; Lind, E; Andersen, JN; Wernersson, LE; Mikkelsen, A,期刊:Applied Physics Letters, 页码:132904-132904 , 文章类型: Article,,卷期:2010年97-13]
- Thin high-kappa oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick ...
- SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers
[作者:Schmelzer, S; Brauhaus, D; Hoffmann-Eifert, S; Meuffels, P; Bottger, U; Oberbeck, L; Reinig, P; Schroder, U; Waser, R,期刊:Applied Physics Letters, 页码:132907-132907 , 文章类型: Article,,卷期:2010年97-13]
- Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and dielectric SrTiO3 (STO) were grown directly on oxidized silicon substrates. The surface roughness of the layers was fou...
- Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
[作者:Zheng, XH; Huang, AP; Xiao, ZS; Yang, ZC; Wang, M; Zhang, XW; Wang, WW; Chu, PK,期刊:Applied Physics Letters, 页码:132908-132908 , 文章类型: Article,,卷期:2010年97-13]
- The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on ...
- Electric-field-induced phase switching in the lead free piezoelectric potassium sodium bismuth titanate
[作者:Royles, AJ; Bell, AJ; Jephcoat, AP; Kleppe, AK; Milne, SJ; Comyn, TP,期刊:Applied Physics Letters, 页码:132909-132909 , 文章类型: Article,,卷期:2010年97-13]
- High-energy synchrotron radiation has been used to demonstrate an electric-field-induced phase transformation in the ceramic xK(1/2)Bi(1/2)TiO(3)-(1-x)Na1/2Bi1/2TiO3, x=0.2. Application of an electric field >= 2 kV mm(-1...
- Metal-enhanced chemiluminescence from chromium, copper, nickel, and zinc nanodeposits: Evidence for a second enhancement mechanism in metal-enhanced fluorescence
[作者:Weisenberg, M; Zhang, YX; Geddes, CD,期刊:Applied Physics Letters, 页码:133103-133103 , 文章类型: Article,,卷期:2010年97-13]
- Over the past decade metal-fluorophore interactions, metal-enhanced fluorescence, have attracted significant research attention, with the technology now becoming common place in life science applications. In this paper, ...
- Resonance frequency shift of a carbon nanotube with a silver nanoparticle adsorbed at various positions
[作者:Wang, SC; Chang, YC; Lien, DH; Hsu, T; Chang, CS,期刊:Applied Physics Letters, 页码:133105-133105 , 文章类型: Article,,卷期:2010年97-13]
- We positioned a single silver nanoparticle along the length of a carbon nanotube based resonator, and investigated the resonance frequency shift subject to the particle's position. We found that a curve derived from the ...
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