- Work function extraction of metal gates with alternate channel materials
[作者:Coan, M; Johnson, D; Woo, JH; Biswas, N; Misra, V; Majhi, P; Harris, HR,期刊:Journal Of Vacuum Science & Technology B, 页码:22202-22202 , 文章类型: Article,,卷期:2012年30-2]
- The effects of a heterojunction on the effective work function in a metal/high kappa gate stack are studied and a new structure developed for the extraction of the work function. It is found that when a Ge/Si heterostruc...
- Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates
[作者:Cruz-Hernandez, E; Vazquez-Cortes, D; Cisneros-de-la-Rosa, A; Lopez-Luna, E; Mendez-Garcia, VH; Shimomura, S,期刊:Journal Of Vacuum Science & Technology B, 页码:02B111-02B111 , 文章类型: Article,,卷期:2012年30-2]
- The authors report a low-temperature photoluminescence (PL) study of multiple GaAs layers grown between AlAs(0.6 nm)/GaAs(0.6 nm) short-period superlattice barriers (SLBs) simultaneously grown on both GaAs(631) A and (10...
- Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)
[作者:Dargis, R; Arkun, E; Clark, A; Roucka, R; Smith, R; Williams, D; Lebby, M; Demkov, AA,期刊:Journal Of Vacuum Science & Technology B, 页码:02B110-02B110 , 文章类型: Article,,卷期:2012年30-2]
- Ternary and binary rare-earth oxides that are used as a template buffer, which accommodates the crystal lattice mismatch between substrate and a semiconductor layer, are discussed here. The oxides were grown on Si(111) s...
- Emission properties of carbon nanowalls on porous silicon
[作者:Evlashin, SA; Mankelevich, YA; Borisov, VV; Pilevskii, AA; Stepanov, AS; Krivchenko, VA; Suetin, NV; Rakhimov, AT,期刊:Journal Of Vacuum Science & Technology B, 页码:21801-21801 , 文章类型: Article,,卷期:2012年30-2]
- For the past two decades various methods of carbon nanostructures growth have been proposed. Special substrate pretreatment methods are generally used to grow carbon nanowalls on silicon substrates and among them are mec...
- GaN surface electron field emission efficiency enhancement by low-energy photon illumination
[作者:Evtukh, A; Yilmazoglu, O; Litovchenko, V; Ievtukh, V; Hartnagel, HL; Pavlidis, D,期刊:Journal Of Vacuum Science & Technology B, 页码:22206-22206 , 文章类型: Article,,卷期:2012年30-2]
- The enhancement of electron field emission efficiency due to illumination by low energy photons has been investigated. Illumination of electron field emitting GaN cathodes with light energy lower than the bandgap caused ...
- Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy
[作者:Fan, J; Ouyang, L; Liu, XY; Ding, D; Furdyna, JK; Smith, DJ; Zhang, YH,期刊:Journal Of Vacuum Science & Technology B, 页码:02B122-02B122 , 文章类型: Article,,卷期:2012年30-2]
- This paper reports high-quality GaSb grown on ZnTe using molecular beam epitaxy with a temperature ramp during growth, and investigates the influence of the temperature ramp on material properties. During growth, in situ...
- Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition
[作者:Fang, RC; Wang, LH; Yang, W; Sun, QQ; Zhou, P; Wang, PF; Ding, SJ; Zhang, DW,期刊:Journal Of Vacuum Science & Technology B, 页码:20602-20602 , 文章类型: Article,,卷期:2012年30-2]
- HfO2-based flexible memories were fabricated using a low temperature atomic layer deposition (LTALD) process to examine resistive switching performance. The devices exhibit typical bipolar resistive switching. The endura...
- Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxy
[作者:Fujita, M; Sato, T; Kitada, T; Kawaharazuka, A; Horikoshi, Y,期刊:Journal Of Vacuum Science & Technology B, 页码:02B126-02B126 , 文章类型: Article,,卷期:2012年30-2]
- CuGaSe2 films were grown on GaAs (001) substrates by migration enhanced epitaxy, where Cu + Ga and Se are alternately deposited. The in situ reflection high energy electron diffraction observation during growth revealed ...
- Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
[作者:Hoke, WE; Chelakara, RV; Bettencourt, JP; Kazior, TE; LaRoche, JR; Kennedy, TD; Mosca, JJ; Torabi, A; Kerr, AJ; Lee, HS; Palacios, T,期刊:Journal Of Vacuum Science & Technology B, 页码:02B101-02B101 , 文章类型: Article,,卷期:2012年30-2]
- GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on 100 mm diameter modified silicon-on-...
- Nanoscale scratching of platinum thin films using atomic force microscopy with DLC tips
[作者:Jiang, XH; Wu, GY; Du, ZL; Ma, KJ; Shirakashi, J; Tseng, AA,期刊:Journal Of Vacuum Science & Technology B, 页码:21605-21605 , 文章类型: Article,,卷期:2012年30-2]
- Atomic force microscopy experiments were conducted to investigate the scratching characteristics of platinum thin-films for making microscale or nanoscale structures. The wear behavior of the diamond-like-carbon coated t...
- Ultra-high vacuum deposition and characterization of silicon nitride thin films
[作者:Katzer, DS; Meyer, DJ; Storm, DF; Mittereder, JA; Bermudez, VM; Cheng, SF; Jernigan, GG; Binari, SC,期刊:Journal Of Vacuum Science & Technology B, 页码:02B129-02B129 , 文章类型: Article,,卷期:2012年30-2]
- Silicon nitride thin films were deposited on (100) Si wafers in an ultra-high vacuum system using a Si effusion cell and reactive nitrogen from a radio-frequency plasma source. The films were characterized using infrared...
- Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology
[作者:Kim, RH; Watso, R; van Dommelen, Y; Finders, J; Colburn, ME; Levinson, HJ,期刊:Journal Of Vacuum Science & Technology B, 页码:21602-21602 , 文章类型: Article,,卷期:2012年30-2]
- Optimization of critical dimension (CD) uniformity during a spacer-defined double patterning process was explored. Image log-slope (ILS) was used as a major metric in optimizing the CD uniformity as well as the vertical ...
|