- Simultaneous self-collimation of fundamental and second-harmonic in sonic crystals - art. no. 151905
[作者:Soliveres, E; Perez-Arjona, I; Pico, R; Espinosa, V; Sanchez-Morcillo, VJ; Staliunas, K,期刊:Applied Physics Letters, 页码:51905-51905 , 文章类型: Article,,卷期:2011年99-15]
- Simultaneous self-collimation of sound beams with different frequencies, corresponding to fundamental wave and to its second harmonic, is proposed theoretically and demonstrated experimentally. The result is obtained whe...
- Effect of carbon doping on the structure of amorphous GeTe phase change material - art. no. 151906
[作者:Ghezzi, GE; Raty, JY; Maitrejean, S; Roule, A; Elkaim, E; Hippert, F,期刊:Applied Physics Letters, 页码:51906-51906 , 文章类型: Article,,卷期:2011年99-15]
- Carbon-doped GeTe is a promising material for use in phase change memories since the addition of C increases the stability of the amorphous phase. By combining x-ray total scattering experiments and ab initio molecular d...
- Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor - art. no. 152108
[作者:Yu, JW; Li, CK; Chen, CY; Wu, YR; Chou, LJ; Peng, LH,期刊:Applied Physics Letters, 页码:52108-52108 , 文章类型: Article,,卷期:2011年99-15]
- We investigated the transport properties of [11 (2) over bar0]-gallium nitride (GaN)/gallium oxide (Ga2O3) single nanowire metal-oxide-semiconductor field-effect-transistor grown on (0001) sapphire substrates. With 0.1 m...
- Room temperature spin filtering effect in GaNAs: Role of hydrogen - art. no. 152109
[作者:Puttisong, Y; Dagnelund, D; Buyanova, IA; Tu, CW; Polimeni, A; Capizzi, M; Chen, WM,期刊:Applied Physics Letters, 页码:52109-52109 , 文章类型: Article,,卷期:2011年99-15]
- Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown t...
- Thermal emittance and response time of a cesium antimonide photocathode - art. no. 152110
[作者:Cultrera, L; Bazarov, I; Bartnik, A; Dunham, B; Karkare, S; Merluzzi, R; Nichols, M,期刊:Applied Physics Letters, 页码:52110-52110 , 文章类型: Article,,卷期:2011年99-15]
- Measurements of the intrinsic emittance and response time of a Cs3Sb photocathode are presented. The emittance is obtained with a solenoid scan technique using a high voltage dc photoemission gun. Photoemission response ...
- Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers - art. no. 152111
[作者:Bar, M; Schubert, BA; Marsen, B; Krause, S; Pookpanratana, S; Unold, T; Weinhardt, L; Heske, C; Schock, HW,期刊:Applied Physics Letters, 页码:52111-52111 , 文章类型: Article,,卷期:2011年99-15]
- The chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers has been investigated by direct and inverse photoemission. Particular emphasis was placed on the impact of KCN etching, which sign...
- Transport and thermal properties of single- and polycrystalline NiZr0.5Hf0.5Sn - art. no. 152112
[作者:Ouardi, S; Fecher, GH; Felser, C; Blum, CGF; Bombor, D; Hess, C; Wurmehl, S; Buchner, B; Ikenaga, E,期刊:Applied Physics Letters, 页码:52112-52112 , 文章类型: Article,,卷期:2011年99-15]
- The thermoelectric properties of a Heusler compound with NiZr0.5Hf0.5Sn composition were studied. A comparison of the properties of a single crystal and a polycrystal was carried out by measurements of the electrical con...
- Current-induced coupled domain wall motions in a two-nanowire system - art. no. 152501
[作者:Purnama, I; Sekhar, MC; Goolaup, S; Lew, WS,期刊:Applied Physics Letters, 页码:52501-52501 , 文章类型: Article,,卷期:2011年99-15]
- In two closely spaced nanowires system, where domain walls exist in both of the nanowires, applying spin-polarized current to any of the nanowire will induce domain wall motions in the adjacent nanowire. The zero-current...
- Strongly enhanced magnetic moments in ferromagnetic FeMnP0.5Si0.5 - art. no. 152502
[作者:Hudl, M; Haggstrom, L; Delczeg-Czirjak, EK; Hoglin, V; Sahlberg, M; Vitos, L; Eriksson, O; Nordblad, P; Andersson, Y,期刊:Applied Physics Letters, 页码:52502-52502 , 文章类型: Article,,卷期:2011年99-15]
- The compound FeMnP0.5Si0.5 has been studied by magnetic measurements, Mossbauer spectroscopy, and electronic structure and total energy calculations. An unexpectedly high magnetic hyperfine field for Fe atoms located at ...
- Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition - art. no. 152103
[作者:Vincent, B; Gencarelli, F; Bender, H; Merckling, C; Douhard, B; Petersen, DH; Hansen, O; Henrichsen, HH; Meersschaut, J; Vandervorst, W; Heyns, M; Loo, R; Caymax, M,期刊:Applied Physics Letters, 页码:52103-52103 , 文章类型: Article,,卷期:2011年99-15]
- In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn l...
- Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds - art. no. 152104
[作者:Wimmer, M; Bar, M; Gerlach, D; Wilks, RG; Scherf, S; Lupulescu, C; Ruske, F; Felix, R; Hupkes, J; Gavrila, G; Gorgoi, M; Lips, K; Eberhardt, W; Rech, B,期刊:Applied Physics Letters, 页码:52104-52104 , 文章类型: Article,,卷期:2011年99-15]
- The chemical structure of the interface between silicon thin films and the transparent conductive oxide ZnO:Al has been investigated by hard x-ray photoelectron spectroscopy. By varying the excitation energy between 2010...
- Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films - art. no. 152105
[作者:Tominaga, J; Simpson, RE; Fons, P; Kolobov, AV,期刊:Applied Physics Letters, 页码:52105-52105 , 文章类型: Article,,卷期:2011年99-15]
- Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolit...
- Defect detection in nano-scale transistors based on radio-frequency reflectometry - art. no. 152106
[作者:Villis, BJ; Orlov, AO; Jehl, X; Snider, GL; Fay, P; Sanquer, M,期刊:Applied Physics Letters, 页码:52106-52106 , 文章类型: Article,,卷期:2011年99-15]
- Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-p...
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