- Charge density waves condensate as measure of charge order and disorder in Eu1-xSrxMnO3 (x=0.50, 0.58) manganites - art. no. 062408
[作者:Pandey, P; Awari, N; Rana, R; Singh, A; Prabhu, SS; Rana, DS,期刊:Applied Physics Letters, 页码:62408-62408 , 文章类型: Article,,卷期:2012年100-6]
- We have explored the low-energy excitations in epitaxial thin films of Eu1-xSrxMnO3 [x = 0.50: spin-glass with short range charge-order and x = 0.58: long range charge-order] using terahertz time-domain spectroscopy. A f...
- Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes - art. no. 061113
[作者:Kim, KS; Suh, MG; Cho, SN,期刊:Applied Physics Letters, 页码:61113-61113 , 文章类型: Article,,卷期:2012年100-6]
- The Ni-dot/Ag/Pt layer, where Ni-dot layer is formed of nanometer sized Ni dots, has been used to improve the reflectivity from the surface of p-type GaN in a light emitting diode (LED). Comparing with Ni/Ag/Pt layer, wh...
- Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000(1)over-bar) - art. no. 061602
[作者:Chinchore, A; Wang, KK; Shi, M; Liu, YH; Smith, AR,期刊:Applied Physics Letters, 页码:61602-61602 , 文章类型: Article,,卷期:2012年100-6]
- Deposition of manganese onto the gallium-rich, nitrogen-polar GaN(000 (1) over bar) surface results in the formation of quantum-height island structures. Two unique island heights differing by one atomic layer are observ...
- Spontaneous induction of the uniform lying helix alignment in bimesogenic liquid crystals for the flexoelectro-optic effect - art. no. 063501
[作者:Gardiner, DJ; Morris, SM; Hands, PJW; Castles, F; Qasim, MM; Kim, WS; Choi, SS; Wilkinson, TD; Coles, HJ,期刊:Applied Physics Letters, 页码:63501-63501 , 文章类型: Article,,卷期:2012年100-6]
- Using in-plane electric fields, the electrical induction of the uniform lying helix (ULH) alignment in chiral nematic liquid crystals is reported. This process permits spontaneous induction of the ULH alignment to give a...
- Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films - art. no. 062902
[作者:Bae, J; Hwang, I; Jeong, Y; Kang, SO; Hong, S; Son, J; Choi, J; Kim, J; Park, J; Seong, MJ; Jia, QX; Park, BH,期刊:Applied Physics Letters, 页码:62902-62902 , 文章类型: Article,,卷期:2012年100-6]
- Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Ra...
- Formation and structure of 360 and 540 degree domain walls in thin magnetic stripes - art. no. 062407
[作者:Jang, Y; Bowden, SR; Mascaro, M; Unguris, J; Ross, CA,期刊:Applied Physics Letters, 页码:62407-62407 , 文章类型: Article,,卷期:2012年100-6]
- 360 degrees, 540 degrees, and other complex transverse domain walls have been created in narrow cobalt wires connected to injection pads by cycling a magnetic field perpendicular to the wire length. The composite walls, ...
- Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal - art. no. 063116
[作者:Kellermann, G; Montoro, LA; Giovanetti, LJ; Claro, PCD; Zhang, L; Ramirez, AJ; Requejo, FG; Craievich, AF,期刊:Applied Physics Letters, 页码:63116-63116 , 文章类型: Article,,卷期:2012年100-6]
- A Co-doped silica film was deposited on the surface of a Si(100) wafer and isothermally annealed at 750 degrees C to form spherical Co nanoparticles embedded in the silica film and a few atomic layer thick CoSi2 nanoplat...
- Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer - art. no. 063111
[作者:Tsumori, N; Takahashi, M; Kubota, R; Regreny, P; Gendry, M; Saiki, T,期刊:Applied Physics Letters, 页码:63111-63111 , 文章类型: Article,,卷期:2012年100-6]
- We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semicon...
- Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations - art. no. 061111
[作者:Pecora, EF; Zhang, W; Nikiforov, AY; Zhou, L; Smith, DJ; Yin, J; Paiella, R; Dal Negro, L; Moustakas, TD,期刊:Applied Physics Letters, 页码:61111-61111 , 文章类型: Article,,卷期:2012年100-6]
- Deep-UV optical gain has been demonstrated in Al0.7Ga0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure pote...
- Superconducting low-inductance undulatory galvanometer microwave amplifier - art. no. 063503
[作者:Hover, D; Chen, YF; Ribeill, GJ; Zhu, S; Sendelbach, S; McDermott, R,期刊:Applied Physics Letters, 页码:63503-63503 , 文章类型: Article,,卷期:2012年100-6]
- We describe a microwave amplifier based on the superconducting low-inductance undulatory galvanometer (SLUG). The SLUG is embedded in a microstrip resonator, and the signal current is injected directly into the device lo...
- Suppression of microwave rectification effects in electrically detected magnetic resonance measurements - art. no. 063510
[作者:Lo, CC; Bradbury, FR; Tyryshkin, AM; Weis, CD; Bokor, J; Schenkel, T; Lyon, SA,期刊:Applied Physics Letters, 页码:63510-63510 , 文章类型: Article,,卷期:2012年100-6]
- Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induc...
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