- Ultrabroadband terahertz spectroscopy of chalcogenide glasses - art. no. 031901
[作者:Zalkovskij, M; Bisgaard, CZ; Novitsky, A; Malureanu, R; Savastru, D; Popescu, A; Jepsen, PU; Lavrinenko, AV,期刊:Applied Physics Letters, 页码:31901-31901 , 文章类型: Article,,卷期:2012年100-3]
- Chalcogenide glasses are receiving a lot of attention due to their unique optical properties. In this paper we study the optical properties of As2S3 and GaLaS glasses in a broad terahertz (THz) frequency range (0.2-18 TH...
- Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles - art. no. 033101
[作者:Okabayashi, N; Maeda, K; Muraki, T; Tanaka, D; Sakamoto, M; Teranishi, T; Majima, Y,期刊:Applied Physics Letters, 页码:33101-33101 , 文章类型: Article,,卷期:2012年100-3]
- Single-electron transistors have the potential to become next-generation nanodevices and sensors owing to their small size, low power consumption, and high charge sensitivity, where the charging energy of the devices is ...
- The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors - art. no. 033301
[作者:Li, JH; Du, J; Xu, JB; Chan, HLW; Yan, F,期刊:Applied Physics Letters, 页码:33301-33301 , 文章类型: Article,,卷期:2012年100-3]
- Organic thin-film transistors based on a high mobility n-type semiconductor poly{[n,n9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} P(NDI2OD-T2) and different polymer ...
- Low noise MgB2 terahertz hot-electron bolometer mixers - art. no. 033504
[作者:Bevilacqua, S; Cherednichenko, S; Drakinskiy, V; Stake, J; Shibata, H; Tokura, Y,期刊:Applied Physics Letters, 页码:33504-33504 , 文章类型: Article,,卷期:2012年100-3]
- We report on low noise terahertz bolometric mixers made of MgB2 superconducting thin films. For a 10-nm-thick MgB2 film, the lowest mixer noise temperature was 600K at 600 GHz. For 30 to 10-nm-thick films, the mixer gain...
- Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets - art. no. 033119
[作者:Yeh, TW; Lin, YT; Ahn, B; Stewart, LS; Dapkus, PD; Nutt, SR,期刊:Applied Physics Letters, 页码:33119-33119 , 文章类型: Article,,卷期:2012年100-3]
- We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nano...
- Ultrafast all-optical tunable Fano resonance in nonlinear ferroelectric photonic crystals - art. no. 031106
[作者:Zhang, YB; Hu, XY; Fu, YL; Yang, H; Gong, QH,期刊:Applied Physics Letters, 页码:31106-31106 , 文章类型: Article,,卷期:2012年100-3]
- We report an ultrafast all-optical tunable Fano resonance in a nonlinear ferroelectric photonic crystal made of polycrystal lithium niobate, which provides a large nonlinear susceptibility because of strong quantum size ...
- Magnetodielectric effect in Z-type hexaferrite - art. no. 032901
[作者:Zhang, X; Zhao, YG; Cui, YF; Ye, LD; Wang, JW; Zhang, S; Zhang, HY; Zhu, MH,期刊:Applied Physics Letters, 页码:32901-32901 , 文章类型: Article,,卷期:2012年100-3]
- The authors report on the magnetodielectric (MD) effect of Z-type hexaferrite Sr3Co2Fe24O41 at various temperatures and frequencies. A fairly large negative MD effect was observed with a peak near room temperature and a ...
- Room temperature ferromagnetism in transparent Fe-doped In2O3 films - art. no. 032404
[作者:Kim, H; Osofsky, M; Miller, MM; Qadri, SB; Auyeung, RCY; Pique, A,期刊:Applied Physics Letters, 页码:32404-32404 , 文章类型: Article,,卷期:2012年100-3]
- Fe-doped In2O3 thin films were deposited on MgO substrates by pulsed laser deposition (PLD). The linear decrease in lattice constant with increasing Fe concentration of up to 18% suggests the incorporation of Fe atoms in...
- Reduction of magnetostatic interactions in self-organized arrays of nickel nanowires using atomic layer deposition (vol 98, 112501, 2011) - art. no. 039901
[作者:Da Col, S; Darques, M; Fruchart, O; Cagnon, L,期刊:Applied Physics Letters, 页码:39901-39901 , 文章类型: Correction,,卷期:2012年100-3]
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- Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias - art. no. 033505
[作者:Meneghini, M; Stocco, A; Bertin, M; Marcon, D; Chini, A; Meneghesso, G; Zanoni, E,期刊:Applied Physics Letters, 页码:33505-33505 , 文章类型: Article,,卷期:2012年100-3]
- This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based high electron mobility transistors submitted to reverse-bias stress. We show that: (1) exposure to reverse-bias may induce ...
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