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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共24条记录   Fabrication and performance of graphene nanoelectromechanical systems [作者：Barton, RA; Parpia, J; Craighead, HG,期刊：Journal Of Vacuum Science & Technology B, 页码：50801-50801 , 文章类型： Review，,卷期：2011年29-5] As a result of the recent progress in fabricating large-area graphene sheets, graphene-based mechanical devices have become vastly easier to manufacture and now show even greater promise for a range of applications. This... Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors [作者：Shao, ZG; Chen, DJ; Liu, B; Lu, H; Xie, ZL; Zhang, R; Zheng, YD,期刊：Journal Of Vacuum Science & Technology B, 页码：51201-51201 , 文章类型： Article，,卷期：2011年29-5] The authors report on InGaN metal-insulator-semiconductor (MIS) photodetectors with two different insulating layers of Si3N4 and Al2O3 deposited via plasma-enhanced chemical vapor deposition and atomic layer deposition, ... Etching mechanisms of thin SiO2 exposed to Cl-2 plasma [作者：Petit-Etienne, C; Darnon, M; Vallier, L; Pargon, E; Cunge, G; Fouchier, M; Bodart, P; Haass, M; Brihoum, M; Joubert, O; Banna, S; Lill, T,期刊：Journal Of Vacuum Science & Technology B, 页码：51202-51202 , 文章类型： Article，,卷期：2011年29-5] Plasma etching is the most standard patterning technology used in micro-and nano-technologies. Chlorine-based plasmas are often used for silicon etching. However, the behavior of thin silicon oxide exposed to such a plas... Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film [作者：Futase, T; Tanioto, H; Kimoto, M; Tsugane, H; Suzuki, H; Tobimatsu, H,期刊：Journal Of Vacuum Science & Technology B, 页码：51203-51203 , 文章类型： Article，,卷期：2011年29-5] The authors investigated the integrity of the interface between a Ni film and a Si substrate treated by in situ chemical dry-cleaning using ammonium fluorosilicate, or (NH4)(2)SiF6. In the conventional cleaning scheme, i... Indium nitride epilayer prepared by UHV- plasma- assisted metalorganic molecule beam epitaxy [作者：Chen, WC; Kuo, SY; Lai, FI; Lin, WT; Hsiao, CN; Tsai, DP,期刊：Journal Of Vacuum Science & Technology B, 页码：51204-51204 , 文章类型： Article，,卷期：2011年29-5] Indium nitride films grown at various growth temperatures were prepared on GaN buffer layers using self-designed plasma-assisted metal-organic molecular beam epitaxy. The influence of substrate temperature on film crysta... Influence of sputtering pressure on band gap of Zn1-xMgxO thin films prepared by radio frequency magnetron sputtering [作者：Wang, DP; Narusawa, T; Kawaharamura, T; Furuta, M; Li, CY,期刊：Journal Of Vacuum Science & Technology B, 页码：51205-51205 , 文章类型： Article，,卷期：2011年29-5] Zn1-xMgxO thin films were deposited onto quartz glass substrates using a radio frequency magnetron sputtering at various deposition pressures. It was found that the Mg concentration in the Zn1-xMgxO thin films significan... Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors [作者：Periasamy, C; Chakrabarti, P,期刊：Journal Of Vacuum Science & Technology B, 页码：51206-51206 , 文章类型： Article，,卷期：2011年29-5] The article reports the results of our experimental investigation on the effect of UV light on the characteristics of n-ZnO/p-Si heterojunction. c-Axis oriented zinc oxide (ZnO) films were deposited by thermal evaporatio... X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC(N)/Cu interface [作者：King, SW; French, M; Jaehnig, M; Kuhn, M; Boyanov, B; French, B,期刊：Journal Of Vacuum Science & Technology B, 页码：51207-51207 , 文章类型： Article，,卷期：2011年29-5] Electrical leakage in low-k dielectric/Cu interconnects is a continuing reliability concern for advanced <22 nm technologies. One leakage mechanism deserving increased attention is electron transport across the Cu/dielec... Statistical analysis of subnanometer residual disorder in photonic crystal waveguides: Correlation between slow light properties and structural properties [作者：Le Thomas, N; Diao, Z; Zhang, H; Houdre, R,期刊：Journal Of Vacuum Science & Technology B, 页码：51601-51601 , 文章类型： Article，,卷期：2011年29-5] The authors present a statistical study of residual disorder in nominally identical planar photonic crystal waveguides operating in the slow light regime. The focus is on the role played by the subnanometer scaled residu... Novel fabrication technique for nanoscale hydrogen silsesquioxane structures using a direct printing technique [作者：Yang, KY; Oh, SC; Park, H; Lee, H,期刊：Journal Of Vacuum Science & Technology B, 页码：51602-51602 , 文章类型： Article，,卷期：2011年29-5] Hydrogen silsesquioxane (HSQ), a type of spin-on glass, is an attractive material for nanobio, semiconductor and photoelectronic applications because it can be transformed into SiO2 by a simple annealing process. Studies... Large area microcorrals and cavity formation on cantilevers using a focused ion beam [作者：Saraf, LV; Britt, DW,期刊：Journal Of Vacuum Science & Technology B, 页码：51603-51603 , 文章类型： Article，,卷期：2011年29-5] The authors utilize a focused ion beam (FIB) to explore various sputtering parameters in order to form large area microcorrals and cavities on cantilevers. Microcorrals were rapidly created by modifying ion beam blur and... Low energy micron size beam from inductively coupled plasma ion source [作者：Nabhiraj, PY; Menon, R; Bhandari, RK; Rao, GM; Mohan, S,期刊：Journal Of Vacuum Science & Technology B, 页码：51604-51604 , 文章类型： Article，,卷期：2011年29-5] A high brightness inductively coupled plasma ion source based focused ion beam system is being developed. This system is intended to produce a low energy high current micron size beam of the heavier gaseous elements for ... Optimization of postgrowth electron-beam curing for focused electron-beam-induced Pt deposits [作者：Plank, H; Kothleitner, G; Hofer, F; Michelitsch, SG; Gspan, C; Hohenau, A; Krenn, J,期刊：Journal Of Vacuum Science & Technology B, 页码：51801-51801 , 文章类型： Article，,卷期：2011年29-5] The authors use focused electron-beam-induced Pt deposition from a gaseous (CH3)(3)CH3C5H4Pt precursor for the fabrication of electrically conductive structures consisting of Pt nanocrystals embedded in a carbon containi... Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process [作者：Ayari-Kanoun, A; Jaouad, A; Souifi, A; Drouin, D; Beauvais, J,期刊：Journal Of Vacuum Science & Technology B, 页码：51802-51802 , 文章类型： Article，,卷期：2011年29-5] In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that it is poss... Characterization of Mo/Si multilayer growth on stepped topographies [作者：van den Boogaard, AJR; Louis, E; Zoethout, E; Goldberg, KA; Bijkerk, F,期刊：Journal Of Vacuum Science & Technology B, 页码：51803-51803 , 文章类型： Article，,卷期：2011年29-5] Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the step-edge region was studied by cross s... Mueller polarimetry as a tool for detecting asymmetry in diffraction grating profiles [作者：Novikova, T; Bulkin, P; Popov, V; Ibrahim, BH; De Martino, A,期刊：Journal Of Vacuum Science & Technology B, 页码：51804-51804 , 文章类型： Article，,卷期：2011年29-5] Reflected Mueller matrix spectra were measured and simulated for asymmetrical photoresist master diffraction gratings in conical mounting (i.e., the direction of grating grooves was not perpendicular to the plane of ligh...