- How Noniridescent Colors Are Generated by Quasi-ordered Structures of Bird Feathers
[作者:Noh, H; Liew, SF; Saranathan, V; Mochrie, SGJ; Prum, RO; Dufresne, ER; Cao, H,期刊:ADVANCED MATERIALS, 页码:2871-2880 , 文章类型: Article,,卷期:2010年22-26-27]
- We investigate the mechanism of structural coloration by quasi-ordered nanostructures in bird feather barbs. Small-angle X-ray scattering (SAXS) data reveal the structures are isotropic and have short-range order on leng...
- Achieving A-Site Termination on La0.18Sr0.82Al0.59Ta0.41O3 Substrates
[作者:Ngai, JH; Schwendemann, TC; Walker, AE; Segal, Y; Walker, FJ; Altman, EI; Ahn, CH,期刊:ADVANCED MATERIALS, 页码:2945-2945 , 文章类型: Article,,卷期:2010年22-26-27]
- Interfaces between transition metal oxide compounds provide a setting where correlated behavior can emerge Essential to interface studies are substrates that have a single atomic plane termination By tuning the vapor pre...
- Crystalline Oxides on Silicon
[作者:Reiner, JW; Kolpak, AM; Segal, Y; Garrity, KF; Ismail-Beigi, S; Ahn, CH; Walker, FJ,期刊:ADVANCED MATERIALS, 页码:2919-2938 , 文章类型: Review,,卷期:2010年22-26-27]
- This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced...
- Biomimetic Isotropic Nanostructures for Structural Coloration
[作者:Forster, JD; Noh, H; Liew, SF; Saranathan, V; Schreck, CF; Yang, L; Park, JG; Prum, RO; Mochrie, SGJ; O'Hern, CS; Cao, H; Dufresne, ER,期刊:ADVANCED MATERIALS, 页码:2939-2939 , 文章类型: Article,,卷期:2010年22-26-27]
- The self-assembly of films that mimic color-producing nanostructures in bird feathers is described These structures are isotropic and have a characteristic length-scale comparable to the wavelength of visible light Struc...
- Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics
[作者:Reiner, JW; Cui, S; Liu, ZG; Wang, MM; Ahn, CH; Ma, TP,期刊:ADVANCED MATERIALS, 页码:2962-2968 , 文章类型: Article,,卷期:2010年22-26-27]
- A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a power...
- Ferroelectric Field Effect Transistors for Memory Applications
[作者:Hoffman, J; Pan, XA; Reiner, JW; Walker, FJ; Han, JP; Ahn, CH; Ma, TP,期刊:ADVANCED MATERIALS, 页码:2957-2961 , 文章类型: Article,,卷期:2010年22-26-27]
- The non-volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state...
- Chemistry of Ferroelectric Surfaces
[作者:Garrity, K; Kolpak, AM; Ismail-Beigi, S; Altman, EI,期刊:ADVANCED MATERIALS, 页码:2969-2973 , 文章类型: Article,,卷期:2010年22-26-27]
- It has been recognized since the 1950s that the polar and switchable nature of ferroelectric surfaces can potentially lead to polarization direction-dependent surface chemistry. Recent theoretical studies and advances in...
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