- Three-dimensional proximity effect correction for large-scale uniform patterns - art. no. 06F314
[作者:Dai, Q; Lee, SY; Lee, SH; Kim, BG; Cho, HK,期刊:Journal Of Vacuum Science & Technology B, 页码:F6314-F6314 , 文章类型: Article,,卷期:2011年29-6]
- One of the major limiting factors in electron beam (e-beam) lithography is the geometric distortion of written features due to electron scattering, which is known as the proximity effect. A conventional approach to the p...
- Macro-optical inspection method for deterioration evaluation of release-coated mold surfaces for nanoimprint lithography - art. no. 06FC02
[作者:Taniguchi, J; Takahashi, J; Uda, M; Kohayase, A; Kotaki, K,期刊:Journal Of Vacuum Science & Technology B, 页码:FC602-FC602 , 文章类型: Article,,卷期:2011年29-6]
- Nanoimprint lithography (NIL) is a very useful technique for the fabrication of nanopatterns, and it is used in some practical applications. The key issue for mass production is the understanding of the lifetime and dete...
- Light trapping in plasmonic nanocavities on metal surfaces - art. no. 06FF01
[作者:Polyakov, A; Padmore, HA; Liang, XG; Dhuey, S; Harteneck, B; Schuck, JP; Cabrini, S,期刊:Journal Of Vacuum Science & Technology B, 页码:FF601-FF601 , 文章类型: Article,,卷期:2011年29-6]
- In this article we present a fabrication method for producing 15 nm wide 45 nm deep nanogrooves on the metal surface that provide for efficient light trapping. These grooves form a subwavelength grating that allows p-pol...
- Liquid transfer imprint lithography: A new route to residual layer thickness control - art. no. 06FC12
[作者:Koo, N; Kim, JW; Otto, M; Moormann, C; Kurz, H,期刊:Journal Of Vacuum Science & Technology B, 页码:FC612-FC612 , 文章类型: Article,,卷期:2011年29-6]
- In this study, an extension of the soft UV nanoimprint process is presented with improved control of the residual layer thickness and significant reduction of the nanoimprint proximity effect. The process is based on the...
- Lithography-patterning-fidelity-aware electron-optical system design optimization - art. no. 06FD04
[作者:Chen, SY; Ng, HT; Ma, SY; Chen, HH; Liu, CH; Tsai, KY,期刊:Journal Of Vacuum Science & Technology B, 页码:FD604-FD604 , 文章类型: Article,,卷期:2011年29-6]
- Low-energy electron beam lithography is a promising patterning solution for the 21 nm half-pitch node and beyond due to its high resolution, low substrate damage, and increased resist sensitivities. To ensure a successfu...
- Low frequency tantalum electromechanical systems for biomimetical applications - art. no. 06FE05
[作者:Latif, R; Mastropaolo, E; Bunting, A; Cheung, R; Koickal, T; Hamilton, A; Newton, M; Smith, L,期刊:Journal Of Vacuum Science & Technology B, 页码:FE605-FE605 , 文章类型: Article,,卷期:2011年29-6]
- The integration of p-channel metal-oxide-semiconductor transistors and tantalum bridge structures for the fabrication of resonant gate transistors (RGTs) that operate in the audible frequency range has been developed. Re...
- Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices - art. no. 062202
[作者:Kouda, M; Kawanago, T; Ahmet, P; Natori, K; Hattori, T; Iwai, H; Kakushima, K; Nishiyama, A; Sugii, N; Tsutsui, K,期刊:Journal Of Vacuum Science & Technology B, 页码:62202-62202 , 文章类型: Article,,卷期:2011年29-6]
- The authors analyzed the electrical properties of MOS capacitors with thulium oxide (Tm2O3) gate dielectrics and evaluated the thickness-dependent properties. The authors observed that a thin silicate layer (instead of a...
- Local, direct-write, damage-free thinning of germanium nanowires - art. no. 06FB03
[作者:Roediger, P; Mijic, M; Zeiner, C; Lugstein, A; Wanzenboeck, HD; Bertagnolli, E,期刊:Journal Of Vacuum Science & Technology B, 页码:FB603-FB603 , 文章类型: Article,,卷期:2011年29-6]
- A crystallinity-retaining, implantation-free focused electron beam induced etching (FEBIE) process has been exploited to modify germanium nanowires. This technique shows a high selectivity to the metal contacts applied t...
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