- Defect chemistry of Ti-doped antiferroelectric Bi0.85Nd0.15FeO3
[作者：Reaney, IM; MacLaren, I; Wang, LQ; Schaffer, B; Craven, A; Kalantari, K; Sterianou, I; Miao, S; Karimi, S; Sinclair, DC,期刊：Applied Physics Letters, 页码：182902-182902 , 文章类型： Article，,卷期：2012年100-18]
- Aberration corrected scanning transmission electron microscopy revealed that Bi0.85Nd0.15Fe0.9Ti0.1O3 ceramics contain coherent Nd-rich precipitates distributed throughout the perovskite lattice, implying charge compensa...
- Stress-relaxed growth of n-GaN epilayers
[作者：Ryu, JH; Katharria, YS; Kim, HY; Kim, HK; Ko, KB; Han, N; Kang, JH; Park, YJ; Suh, EK; Hong, CH,期刊：Applied Physics Letters, 页码：181904-181904 , 文章类型： Article，,卷期：2012年100-18]
- A significant stress-relaxation was observed in GaN epilayers by integrating a heavily Si-doped GaN (n(+)-GaN) sacrificial layer in the undoped GaN templates grown on sapphire substrates by metal-organic chemical vapor d...
- Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 mu m
[作者：Sakr, S; Giraud, E; Dussaigne, A; Tchernycheva, M; Grandjean, N; Julien, FH,期刊：Applied Physics Letters, 页码：181103-181103 , 文章类型： Article，,卷期：2012年100-18]
- A two-color GaN-based quantum cascade detector is demonstrated. This photodetector operates simultaneously at a peak wavelength of 1.7 and 1 mu m at room temperature without any external voltage. These peaks correspond, ...
- Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
[作者：Shin, IS; Kim, JM; Jeun, JH; Yoo, SH; Ge, ZY; Hong, JI; Bang, JH; Kim, YS,期刊：Applied Physics Letters, 页码：183307-183307 , 文章类型： Article，,卷期：2012年100-18]
- An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a rol...
- Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide
[作者：Shivaraman, S; Herman, LH; Rana, F; Park, J; Spencer, MG,期刊：Applied Physics Letters, 页码：183112-183112 , 文章类型： Article，,卷期：2012年100-18]
- In this work, we study electron transport across the heterojunction interface of epitaxial few-layer graphene grown on silicon carbide and the underlying substrate. The observed Schottky barrier is characterized using cu...
- Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer
[作者：Son, JM; Song, WS; Yoo, CH; Yun, DY; Kim, TW,期刊：Applied Physics Letters, 页码：183303-183303 , 文章类型： Article，,卷期：2012年100-18]
- Organic bistable devices (OBDs) based on a poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer with a poly(methyl methacrylate) (PMMA) buffer layer were fabricated on indium-tin-oxide (ITO)-coated...
- Spin-transfer switching in full-Heusler Co2FeAl-based magnetic tunnel junctions
[作者：Sukegawa, H; Wen, ZC; Kondou, K; Kasai, S; Mitani, S; Inomata, K,期刊：Applied Physics Letters, 页码：182403-182403 , 文章类型： Article，,卷期：2012年100-18]
- We demonstrated spin-transfer magnetization switching using magnetic tunnel junctions (MTJs) with a full-Heusler alloy Co2FeAl (CFA). We prepared CFA (1.5 nm)/MgO/CoFe (4 nm) ("CFA-free") and CFA (30 nm)/MgO/CoFeB (2 nm)...
- Quantum point contact with large subband energy spacings
[作者：Um, YJ; Oh, YH; Seo, M; Lee, S; Chung, Y; Kim, N; Umansky, V; Mahalu, D,期刊：Applied Physics Letters, 页码：183502-183502 , 文章类型： Article，,卷期：2012年100-18]
- Quantum point contact (QPC) with an extra metallic gate in between the split gates of a conventional QPC was fabricated and studied. Clear conductance quantization was observed at 4.2 K when a proper positive voltage was...
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