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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共86条记录   Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer [作者：Lu, TP; Li, ST; Liu, C; Zhang, K; Xu, YQ; Tong, JH; Wu, LJ; Wang, HL; Yang, XD; Yin, Y; Xiao, GW; Zhou, YG,期刊：Applied Physics Letters, 页码：141106-141106 , 文章类型： Article，,卷期：2012年100-14] A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL e... Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors [作者：Marko, P; Alexewicz, A; Hilt, O; Meneghesso, G; Zanoni, E; Wurfl, J; Strasser, G; Pogany, D,期刊：Applied Physics Letters, 页码：143507-143507 , 文章类型： Article，,卷期：2012年100-14] Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward and reverse gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Measurem... Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems [作者：McDonnell, S; Dong, H; Hawkins, JM; Brennan, B; Milojevic, M; Aguirre-Tostado, FS; Zhernokletov, DM; Hinkle, CL; Kim, J; Wallace, RM,期刊：Applied Physics Letters, 页码：141606-141606 , 文章类型： Article，,卷期：2012年100-14] The Al2O3/GaAs and HfO2/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial o... A numerical analysis of multicellular environment for modeling tissue electroporation [作者：Mezeme, ME; Pucihar, G; Pavlin, M; Brosseau, C; Miklavcic, D,期刊：Applied Physics Letters, 页码：143701-143701 , 文章类型： Article，,卷期：2012年100-14] Simulations probing the conductivity changes of three-dimensional models of biological tissues consisting of random ternary core-shell sphere packings with different spatial scales are described. We investigate the tempo... Modification of the surface-state occupancy on noble metal films with stacking fault arrays [作者：Mishra, P; Uchihashi, T; Nakayama, T,期刊：Applied Physics Letters, 页码：141609-141609 , 文章类型： Article，,卷期：2012年100-14] Low-temperature scanning tunneling spectroscopy reveals that striped Au films grown on Ag templates containing periodic arrays of stacking faults exhibit partially populated one-dimensional (1D) surface states, in contra... Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field [作者：Morozovska, AN; Eliseev, EA; Kalinin, SV; Chen, LQ; Gopalan, V,期刊：Applied Physics Letters, 页码：142902-142902 , 文章类型： Article，,卷期：2012年100-14] Theoretical analysis based on the Landau-Ginzburg-Devonshire theory is used to show that the joint action of flexoelectric effect and rotostriction leads to a large spontaneous in-plane polarization (similar to 1-5 mu C/... 1/f noise of Josephson-junction-embedded microwave resonators at single photon energies and millikelvin temperatures [作者：Murch, KW; Weber, SJ; Levenson-Falk, EM; Vijay, R; Siddiqi, I,期刊：Applied Physics Letters, 页码：142601-142601 , 文章类型： Article，,卷期：2012年100-14] We present measurements of 1/f frequency noise in both linear and Josephson-junction-embedded superconducting aluminum resonators in the low power, low temperature regime-typical operating conditions for superconducting ... Magneto-optical magnetometry of individual 30 nm cobalt nanowires grown by electron beam induced deposition [作者：Nikulina, E; Idigoras, O; Vavassori, P; Chuvilin, A; Berger, A,期刊：Applied Physics Letters, 页码：142401-142401 , 文章类型： Article，,卷期：2012年100-14] We show that magnetometry measurements based upon the magneto-optical Kerr effect and high resolution optical microscopy can be used as a noninvasive probe of magnetization reversal for individual nano-structures. Our me... The effect of viewing angle on the spectral behavior of a Gd plasma source near 6.7 nm [作者：O'Gorman, C; Otsuka, T; Yugami, N; Jiang, WH; Endo, A; Li, BW; Cummins, T; Dunne, P; Sokell, E; O'Sullivan, G; Higashiguchi, T,期刊：Applied Physics Letters, 页码：141108-141108 , 文章类型： Article，,卷期：2012年100-14] We have demonstrated the effect of viewing angle on the extreme ultraviolet (EUV) emission spectra of gadolinium (Gd) near 6.7 nm. The spectra are shown to have a strong dependence on viewing angle when produced with a l... Readout of carbon nanotube vibrations based on spin-phonon coupling [作者：Ohm, C; Stampfer, C; Splettstoesser, J; Wegewijs, MR,期刊：Applied Physics Letters, 页码：143103-143103 , 文章类型： Article，,卷期：2012年100-14] We propose a scheme for spin-based detection of the bending motion in suspended carbon-nanotubes, using the curvature-induced spin-orbit interaction. We show that the resulting effective spin-phonon coupling can be used ... Semiconducting behavior of niobium-doped titanium oxide in the amorphous state [作者：Ok, KC; Park, J; Lee, JH; Du Ahn, B; Lee, JH; Chung, KB; Park, JS,期刊：Applied Physics Letters, 页码：142103-142103 , 文章类型： Article，,卷期：2012年100-14] Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450 degrees C, x-ray absorption spectroscopy analyses indicate ... Raman sensitivity to crystal structure in InAs nanowires [作者：Panda, JK; Roy, A; Singha, A; Gemmi, M; Ercolani, D; Pellegrini, V; Sorba, L,期刊：Applied Physics Letters, 页码：143101-143101 , 文章类型： Article，,卷期：2012年100-14] We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in... Structure of Si-capped Ge/SiC/Si(001) epitaxial nanodots: Implications for quantum dot patterning [作者：Petz, CW; Yang, D; Levy, J; Floro, JA,期刊：Applied Physics Letters, 页码：141603-141603 , 文章类型： Article，,卷期：2012年100-14] Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of suc... Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene) [作者：Pingel, P; Schwarzl, R; Neher, D,期刊：Applied Physics Letters, 页码：143303-143303 , 文章类型： Article，,卷期：2012年100-14] Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F(4)TCNQ. We f... Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors [作者：Sarkar, D; Banerjee, K,期刊：Applied Physics Letters, 页码：143108-143108 , 文章类型： Article，,卷期：2012年100-14] Tunnel field-effect-transistor (TFET) based biosensor is proposed, and it is shown that they can surpass by several orders, the performance of those based on conventional FET (CFET) and hence, can potentially revolutioni... Bistability in silicon microring resonator based on strain induced by a piezoelectric lead zirconate titanate thin film [作者：Sebbag, Y; Goykhman, I; Desiatov, B; Nachmias, T; Yoshaei, O; Kabla, M; Meltzer, SE; Levy, U,期刊：Applied Physics Letters, 页码：141107-141107 , 文章类型： Article，,卷期：2012年100-14] We demonstrate bistability in a submicron silicon optical phase shifter based on the photoelastic effect. The strain magnitude is electrically controlled by a piezoelectric thin film placed on top of the device. The hyst...