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  • Chiral tunneling in trilayer graphene
    [作者:Kumar, SB; Guo, J,期刊:Applied Physics Letters, 页码:163102-163102 , 文章类型: Article,,卷期:2012年100-16]
  • We study the effect of chiral-tunneling in Bernal and rhombohedral stacked trilayer-graphene (3LG). Based on the chirality of the electronic bands, at the K-point, (rhombohedral) Bernal-3LG exhibits 100% (50%) transparen...
  • Lateral spin transport through bulk silicon
    [作者:Li, J; Appelbaum, I,期刊:Applied Physics Letters, 页码:162408-162408 , 文章类型: Article,,卷期:2012年100-16]
  • Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 mu m-thick Si channel,...
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