- Fabrication of field-emission cathode ray tube with a unique nanostructure carbon electron emitter
[作者:Wang, HX; Jiang, N; Hiraki, H; Harada, Y; Zhang, H; Wang, J; Haba, M; Hiraki, A,期刊:Journal Of Vacuum Science & Technology B, 页码:698-701 , 文章类型: Article,,卷期:2008年26-2]
- A field-emission cathode ray tube (FE-CRT) has been fabricated using a unique nanostructure carbon electron emitter called carbon nanometer electron exit (CNX) which has been developed on stainless rod substrate with a s...
- Development of a super-high-sensitivity image sensor using 640x480 pixel active-matrix high-efficiency electron emission device
[作者:Negishi, N; Sato, T; Matsuba, Y; Tanaka, R; Nakada, T; Sakemura, K; Okuda, Y; Watanabe, A; Yoshikawa, T; Ogasawara, K; Nanba, M; Okazaki, S; Tanioka, K; Egami, N; Koshida, N,期刊:Journal Of Vacuum Science & Technology B, 页码:711-715 , 文章类型: Article,,卷期:2008年26-2]
- An extremely high-sensitivity image sensor has been developed with a combination of an active-matrix high-efficiency electron emission device (HEED) array and a high-gain avalanche rushing amorphous photoconductor (HARP)...
- Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond
[作者:Yamaguchi, H; Kudo, Y; Masuzawa, T; Kudo, M; Yamada, T; Takakuwa, Y; Okano, K,期刊:Journal Of Vacuum Science & Technology B, 页码:730-734 , 文章类型: Article,,卷期:2008年26-2]
- A possible mechanism for the field emission spectroscopy (FES) peak energy shift observed for lightly nitrogen (N)-doped chemical vapor deposition (CVD) diamond was investigated using natural IIb diamond as a reference. ...
- SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices
[作者:Voss, LF; Ip, K; Peartona, SJ; Shul, RJ; Overberg, ME; Baca, AG; Sanchez, C; Stevens, J; Martinez, M; Armendariz, MG; Wouters, GA,期刊:Journal Of Vacuum Science & Technology B, 页码:487-494 , 文章类型: Article,,卷期:2008年26-2]
- A process for achieving high yield of SiC through wafer via holes without trenching or micromasking and with excellent electrical connection after subsequent metal plating across full wafers was developed for use in high...
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