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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共107条记录   Optimization of the AION buffer layer for PrXOY/Si stacks [作者：Henkel, K; Burkov, Y; Karavaev, K; Torche, M; Schwiertz, C; Schmeisser, D,期刊：Journal Of Vacuum Science & Technology B, 页码：253-257 , 文章类型： Article，,卷期：2009年27-1] The authors investigated an aluminum oxynitride buffer layer for PrXOY/Si metal-insulator-semiconductor stacks. The buffer layer limits unintentional interfacial layer formations and improves the electrical parameters as... Complementary metal oxide semiconductor integration of epitaxial Gd2O3 [作者：Lemme, MC; Gottlob, HDB; Echtermeyer, TJ; Schmidt, M; Kurz, H; Endres, R; Schwalke, U; Czernohorkky, M; Tetzlaff, D; Osten, HJ,期刊：Journal Of Vacuum Science & Technology B, 页码：258-261 , 文章类型： Article，,卷期：2009年27-1] In this paper, epitaxial gadolinium oxide (Gd2O3) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor... Structure dependence of epitaxial Pr2O3/Si(001) on oxygen pressure during growth [作者：Watahiki, T; Braun, W; Riechert, H,期刊：Journal Of Vacuum Science & Technology B, 页码：262-265 , 文章类型： Article，,卷期：2009年27-1] The authors study the structure dependence of epitaxial Pr2O3 layers on Si(001) on the partial pressure of oxygen during growth using reflection high-energy electron diffraction and x-ray reflectivity. The oxygen is nece... Epitaxial growth of high-kappa TiO2 rutile films on RuO2 electrodes [作者：Frohlich, K; Aarik, J; Tapajna, M; Rosova, A; Aidla, A; Dobrocka, E; Huskova, K,期刊：Journal Of Vacuum Science & Technology B, 页码：266-270 , 文章类型： Article，,卷期：2009年27-1] Polycrystalline and epitaxial RuO2/TiO2/RuO2 structures were prepared by a combination of metal organic chemical vapor deposition and atomic layer deposition techniques. TiO2 layer grew in a rutile structure due to epita... Alternative high-k dielectrics for semiconductor applications [作者：Van Elshocht, S; Adelmann, C; Clima, S; Pourtois, G; Conard, T; Delabie, A; Franquet, A; Lehnen, P; Meersschaut, J; Menou, N; Popovici, M; Richard, O; Schram, T; Wang, XP; Hardy, A; Dewulf, D; Van Bael, MK; Lehnen, P; Blomberg, T; Pierreux, D; Swerts, J; Maes, JW; Wouters, DJ; De Gendt, S; Kittl, JA,期刊：Journal Of Vacuum Science & Technology B, 页码：209-213 , 文章类型： Article，,卷期：2009年27-1] Although the next generation high-k gate dielectrics has been defined for the 45 nm complementary metal oxide semiconductor technology node, threshold voltage control and equivalent oxide thickness (EOT) scaling remain c... Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AIN surface passivation layer and silicon/phosphorus coimplanted source/drain [作者：Gao, F; Lee, SJ; Kwong, DL,期刊：Journal Of Vacuum Science & Technology B, 页码：214-217 , 文章类型： Article，,卷期：2009年27-1] By using thin AIN film as a passivation layer between the GaAs and HfO2, GaAs metal-oxide-semiconductor (MOS) devices exhibited well-behaved accumulation and inversion capacitance-voltage characteristics with low leakage... Electrical characteristics of metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field-effect transistors [作者：Lin, CM; Shih, WC; Lee, JYM,期刊：Journal Of Vacuum Science & Technology B, 页码：369-372 , 文章类型： Article，,卷期：2009年27-1] Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors and field effect transistors (FETs) with Al/BiFeO3/Y2O3/Si structure were fabricated. The capacitance-voltage (C-V) characteristics exhibit clockwise hysteres... On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) [作者：Seifarth, O; Dabrowski, J; Zaumseil, P; Muller, S; Schmeisser, D; Mussig, HJ; Schroeder, T,期刊：Journal Of Vacuum Science & Technology B, 页码：271-276 , 文章类型： Article，,卷期：2009年27-1] The influence of stoichiometry and crystal structure on the electronic properties of single crystalline cubic PrO2(111), cubic Pr2O3(111), and hexagonal Pr2O3(0001) thin film heterostructures on Si(111) was investigated ... Band offsets and work function control in field effect transistors [作者：Robertson, J,期刊：Journal Of Vacuum Science & Technology B, 页码：277-285 , 文章类型： Article，,卷期：2009年27-1] The article summarizes the development of metal gate materials and the control of the effective work function on high dielectric constant (high K) oxides for use in advanced Si field effect transistors. The Schottky barr... Influence of the electrode material on HfO2 metal-insulator-metal capacitors [作者：Wenger, C; Lukosius, M; Mussig, HJ; Ruhl, G; Pasko, S; Lohe, C,期刊：Journal Of Vacuum Science & Technology B, 页码：286-289 , 文章类型： Article，,卷期：2009年27-1] TaN and TiN are investigated as bottom electrode materials for metal-insulator-metal (MIM) capacitor applications. Atomic vapor deposited HfO2 films are used as high-k dielectric. The influence of the interfacial layer b... Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks [作者：Fet, A; Haublein, V; Bauer, AJ; Ryssel, H,期刊：Journal Of Vacuum Science & Technology B, 页码：290-293 , 文章类型： Article，,卷期：2009年27-1] While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks is ongoing, several solutions for engineering the threshold voltage V-t of the gate stacks have been proposed. Engineer... Light emission and photoluminescence from high-k dielectrics containing Ge nanocrystals [作者：Chang, ST; Liao, SH,期刊：Journal Of Vacuum Science & Technology B, 页码：535-537 , 文章类型： Article，,卷期：2009年27-1] A metal/HfAlO/Si light emitting diode with Ge nanocrystals embedded in HfAlO has the visible light emission (610 nm) and the infrared emission (760 nm). The image and Ge content are measured by the transmission electron ... HfO2/Si interface formation in atomic layer deposition films: An in situ investigation [作者：Tallarida, M; Karavaev, K; Schmeisser, D,期刊：Journal Of Vacuum Science & Technology B, 页码：300-304 , 文章类型： Article，,卷期：2009年27-1] The authors have studied the initial stages of the atomic layer deposition (ALD) of HfO2 onto Si by means of x-ray photoelectron spectroscopy using synchrotron radiation. The ALD was obtained using HfCl4 and H2O as precu... Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems [作者：Borschel, C; Ronning, C; Hofsass, H; Giussani, A; Zaumseil, P; Wenger, C; Storck, P; Schroeder, T,期刊：Journal Of Vacuum Science & Technology B, 页码：305-309 , 文章类型： Article，,卷期：2009年27-1] Single crystalline epitaxial Si(111)/Y2O3(111)/Si(111) heterostructures were grown by molecular beam epitaxy and the morphology, structure, and defects were characterized in detail. The growth of a closed and smooth laye... Interface states formation in a localized charge trapping nonvolatile memory device [作者：Shapira, A; Shur, Y; Shacham-Diaman, Y; Shappir, A; Eitan, B,期刊：Journal Of Vacuum Science & Technology B, 页码：508-511 , 文章类型： Article，,卷期：2009年27-1] Two NROM nonvolatile memory devices that are practically identical but exhibit different postcycling characteristics are investigated. Electrical characterizations combined with two-dimensional drift diffusion simulation... Low-k dielectrics for trench isolation in nanoscaled complementary metal oxide semiconductor imagers [作者：Irrera, F; Puzzilli, G; Ricci, L; Russo, F; Stirpe, F,期刊：Journal Of Vacuum Science & Technology B, 页码：517-520 , 文章类型： Article，,卷期：2009年27-1] In this article the authors propose a novel T-shaped shallow-trench isolation (STI) technology including an unfilled floating void STI. The structure aims to reduce the dark current in complementary metal oxide semicondu...