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  • An Individual Carbon Nanotube Transistor Tuned by High Pressure
    [作者:Caillier, C; Ayari, A; Gouttenoire, V; Benoit, JM; Jourdain, V; Picher, M; Paillet, M; Le Floch, S; Purcell, ST; Sauvajol, JL; San Miguel, A,期刊:ADVANCED FUNCTIONAL MATERIALS, 页码:3330-3335 , 文章类型: Article,,卷期:2010年20-19]
  • A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the e...