- Ultimate fast optical switching of a planar microcavity in the telecom wavelength range (vol 98, 161114, 2011) - art. no. 199901
[作者:Ctistis, G; Yuce, E; Hartsuiker, A; Claudon, J; Bazin, M; Gerard, JM; Vos, WL,期刊:Applied Physics Letters, 页码:99901-99901 , 文章类型: Correction,,卷期:2011年99-19]
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- Ultra-broadband heterogeneous quantum cascade laser emitting from 2.2 to 3.2 THz - art. no. 191104
[作者:Turcinkova, D; Scalari, G; Castellano, F; Amanti, MI; Beck, M; Faist, J,期刊:Applied Physics Letters, 页码:91104-91104 , 文章类型: Article,,卷期:2011年99-19]
- We present a heterogeneous terahertz quantum cascade laser that emits continuously between 2.2 and 3.2 THz, covering an emission range of over 40% around the central frequency. Devices were realized by stacking different...
- Terahertz coherent acoustic experiments with semiconductor superlattices - art. no. 191908
[作者:Huynh, A; Perrin, B; Jusserand, B; Lemaitre, A,期刊:Applied Physics Letters, 页码:91908-91908 , 文章类型: Article,,卷期:2011年99-19]
- We demonstrate the generation, propagation, and detection of coherent acoustic waves at 1 THz. We performed picosecond ultrasonics experiments in an acoustic transmission geometry, which allows a total decoupling of the ...
- Magnetic reconstruction at oxygen-deficient SrMnO3 (001) surface: A first-principle investigation - art. no. 192510
[作者:Hou, F; Cai, TY; Ju, S; Shen, MR,期刊:Applied Physics Letters, 页码:92510-92510 , 文章类型: Article,,卷期:2011年99-19]
- Based on extensive first-principle density functional theory calculations, we have revealed the spin-flip process at the oxygen-deficient Mn-terminated SrMnO3 (001) surface. With the increase of oxygen vacancies, the occ...
- Vertically integrated silicon-germanium nanowire field-effect transistor - art. no. 193107
[作者:Rosaz, G; Salem, B; Pauc, N; Potie, A; Gentile, P; Baron, T,期刊:Applied Physics Letters, 页码:93107-93107 , 文章类型: Article,,卷期:2011年99-19]
- We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage close to 3.9V, an I-ON/I-OFF...
- Ultra-high four wave mixing efficiency in slot waveguides with silicon nanocrystals - art. no. 191105
[作者:Trita, A; Lacava, C; Minzioni, P; Colonna, JP; Gautier, P; Fedeli, JM; Cristiani, I,期刊:Applied Physics Letters, 页码:91105-91105 , 文章类型: Article,,卷期:2011年99-19]
- We report on wavelength conversion through four-wave-mixing in silicon slot-waveguides with embedded silicon nanocrystals. The combination of strong optical confinement and Si:nc nonlinearity provides a huge waveguide no...
- Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers - art. no. 192507
[作者:Tiercelin, N; Dusch, Y; Klimov, A; Giordano, S; Preobrazhensky, V; Pernod, P,期刊:Applied Physics Letters, 页码:92507-92507 , 文章类型: Article,,卷期:2011年99-19]
- We present here the demonstration of magnetoelectric switching of magnetization between two stable positions defined by a combination of anisotropy and magnetic field. A magnetoelastic nanostructured multilayer with the ...
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