- Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes - art. no. 171115
[作者:Farrell, RM; Haeger, DA; Hsu, PS; Fujito, K; Feezell, DF; DenBaars, SP; Speck, JS; Nakamura, S,期刊:Applied Physics Letters, 页码:71115-71115 , 文章类型: Article,,卷期:2011年99-17]
- The dependence of device characteristics on cavity length is used to determine the injection efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Estim...
- The role of a diffusion barrier in plasma display panel with the high gamma cathode layer - art. no. 171501
[作者:Lee, TH; Cheong, HW; Kwon, O; Whang, KW; Steinmuller, SO; Janek, J,期刊:Applied Physics Letters, 页码:71501-71501 , 文章类型: Article,,卷期:2011年99-17]
- Plasma display panel (PDP) with MgO-SrO double cathode layer and SiO2 diffusion barrier is proposed to make the SrO layer free of contaminations. Time of flight-secondary ion mass spectrometry (TOF-SIMS) analysis shows t...
- Surface transport of energetic electrons in intense picosecond laser-foil interactions - art. no. 171502
[作者:Gray, RJ; Yuan, XH; Carroll, DC; Brenner, CM; Coury, M; Quinn, MN; Tresca, O; Zielbauer, B; Aurand, B; Bagnoud, V; Fils, J; Kuehl, T; Lin, XX; Li, C; Li, YT; Roth, M; Neely, D; McKenna, P,期刊:Applied Physics Letters, 页码:71502-71502 , 文章类型: Article,,卷期:2011年99-17]
- The angular distribution of energetic electrons emitted from thin foil targets irradiated by intense, picosecond laser pulses is measured as a function of laser incidence angle, intensity, and polarization. Although the ...
- Existence of a giant hypersonic elastic mirror in porous silicon superlattices - art. no. 171901
[作者:Moctezuma-Enriquez, D; Rodriguez-Viveros, YJ; Manzanares-Martinez, MB; Castro-Garay, P; Urrutia-Banuelos, E; Manzanares-Martinez, J,期刊:Applied Physics Letters, 页码:71901-71901 , 文章类型: Article,,卷期:2011年99-17]
- In this work, we theoretically predict the possibility to obtain a giant hypersonic elastic mirror in porous silicon superlattices by using a phononic heterostructure. The heterostructure is composed of a tandem of multi...
- The power factor of Cr-doped V2O3 near the Mott transition - art. no. 171902
[作者:Populoh, S; Auban-Senzier, P; Wzietek, P; Pasquier, CR,期刊:Applied Physics Letters, 页码:71902-71902 , 文章类型: Article,,卷期:2011年99-17]
- We have measured the Seebeck coefficient, S, of nominally 1.1% Cr doped V2O3 as a function of both temperature and pressure. Large variations of S are found at the Mott insulator-metal transition. A combination of our da...
- Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates - art. no. 171903
[作者:Liu, X; Smith, DJ; Fan, J; Zhang, YH; Cao, H; Chen, YP; Leiner, J; Kirby, BJ; Dobrowolska, M; Furdyna, JK,期刊:Applied Physics Letters, 页码:71903-71903 , 文章类型: Article,,卷期:2011年99-17]
- Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te...
- Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy - art. no. 171908
[作者:Yu, HW; Chang, EY; Yamamoto, Y; Tillack, B; Wang, WC; Kuo, CI; Wong, YY; Nguyen, HQ,期刊:Applied Physics Letters, 页码:71908-71908 , 文章类型: Article,,卷期:2011年99-17]
- The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 degrees C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grow...
- Strong blue and red luminescence in silicon nanoparticles based light emitting capacitors - art. no. 171102
[作者:Morales-Sanchez, A; Monfil-Leyva, K; Gonzalez, AA; Aceves-Mijares, M; Carrillo, J; Luna-Lopez, JA; Dominguez, C; Barreto, J; Flores-Gracia, FJ,期刊:Applied Physics Letters, 页码:71102-71102 , 文章类型: Article,,卷期:2011年99-17]
- Light emitting capacitors (LECs) were fabricated using silicon rich oxide (SRO) films as active layer. Blue and red electroluminescence (EL) was observed by changing the silicon nanoparticle (Si-np) size from 1.5 to 2.7 ...
- Mixed state effects in waveguide electro-absorbers based on quantum dots - art. no. 171103
[作者:Piwonski, T; Pulka, J; Huyet, G; Houlihan, J; Viktorov, EA; Erneux, T,期刊:Applied Physics Letters, 页码:71103-71103 , 文章类型: Article,,卷期:2011年99-17]
- Multi-pulse heterodyne pump-probe measurements are used to investigate the reverse bias dynamics of InAs/GaAs quantum dots in a waveguide structure. Using a femtosecond pulse, we simultaneously populate high energy groun...
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