- Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes
[作者:Xing, R; Xuan, Y; Ma, DG; Han, YC,期刊:Journal Of Vacuum Science & Technology B, 页码:1-5 , 文章类型: Article,,卷期:2008年26-1]
- This paper reports a new patterning method, the complementary-structure micropatterning (CSMP) technique, to fabricate the undercut structures for the passive-matrix display of organic light-emitting diodes (OLEDs). Firs...
- Fabrication and performance of nanoscale ultrasmooth programed defects for extreme ultraviolet lithography
[作者:Olynick, DL; Salmassi, F; Liddle, JA; Mirkarimi, PB; Spiller, E; Baker, SL; Robinson, J,期刊:Journal Of Vacuum Science & Technology B, 页码:6-10 , 文章类型: Article,,卷期:2008年26-1]
- The authors have developed processes for producing nanoscale programed substrate defects that have applications in areas such as thin film growth, extreme ultraviolet lithography, and defect inspection. Particle, line, p...
- Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F8/Ar and CF4/H-2 based capacitively coupled plasmas
[作者:Ling, L; Hua, X; Zheng, L; Oehrlein, GS; Hudson, EA; Jiang, P,期刊:Journal Of Vacuum Science & Technology B, 页码:11-22 , 文章类型: Article,,卷期:2008年26-1]
- A high-aspect ratio, small gap structure that provides a sample surface region without direct ion bombardment has been used to study surface chemistry aspects of fluorocarbon (FC) film deposition and to simulate FC film ...
- Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
[作者:Jun, M; Jang, M; Kim, Y; Choi, C; Kim, T; Oh, S; Lee, S,期刊:Journal Of Vacuum Science & Technology B, 页码:137-140 , 文章类型: Article,,卷期:2008年26-1]
- We manufactured erbium-silicided Schottky diodes on n-type and p-type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from ...
- Patterned wafer defect density analysis of step and flash imprint lithography
[作者:McMackin, I; Martin, W; Perez, J; Selinidis, K; Maltabes, J; Xu, F; Resnick, D; Sreenivasan, SV,期刊:Journal Of Vacuum Science & Technology B, 页码:151-155 , 文章类型: Article,,卷期:2008年26-1]
- Acceptance of imprint lithography for complementary metal-oxide semiconductor (CMOS) manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device p...
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