- Optimization of the AION buffer layer for PrXOY/Si stacks
[作者:Henkel, K; Burkov, Y; Karavaev, K; Torche, M; Schwiertz, C; Schmeisser, D,期刊:Journal Of Vacuum Science & Technology B, 页码:253-257 , 文章类型: Article,,卷期:2009年27-1]
- The authors investigated an aluminum oxynitride buffer layer for PrXOY/Si metal-insulator-semiconductor stacks. The buffer layer limits unintentional interfacial layer formations and improves the electrical parameters as...
- Complementary metal oxide semiconductor integration of epitaxial Gd2O3
[作者:Lemme, MC; Gottlob, HDB; Echtermeyer, TJ; Schmidt, M; Kurz, H; Endres, R; Schwalke, U; Czernohorkky, M; Tetzlaff, D; Osten, HJ,期刊:Journal Of Vacuum Science & Technology B, 页码:258-261 , 文章类型: Article,,卷期:2009年27-1]
- In this paper, epitaxial gadolinium oxide (Gd2O3) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor...
- Epitaxial growth of high-kappa TiO2 rutile films on RuO2 electrodes
[作者:Frohlich, K; Aarik, J; Tapajna, M; Rosova, A; Aidla, A; Dobrocka, E; Huskova, K,期刊:Journal Of Vacuum Science & Technology B, 页码:266-270 , 文章类型: Article,,卷期:2009年27-1]
- Polycrystalline and epitaxial RuO2/TiO2/RuO2 structures were prepared by a combination of metal organic chemical vapor deposition and atomic layer deposition techniques. TiO2 layer grew in a rutile structure due to epita...
- Alternative high-k dielectrics for semiconductor applications
[作者:Van Elshocht, S; Adelmann, C; Clima, S; Pourtois, G; Conard, T; Delabie, A; Franquet, A; Lehnen, P; Meersschaut, J; Menou, N; Popovici, M; Richard, O; Schram, T; Wang, XP; Hardy, A; Dewulf, D; Van Bael, MK; Lehnen, P; Blomberg, T; Pierreux, D; Swerts, J; Maes, JW; Wouters, DJ; De Gendt, S; Kittl, JA,期刊:Journal Of Vacuum Science & Technology B, 页码:209-213 , 文章类型: Article,,卷期:2009年27-1]
- Although the next generation high-k gate dielectrics has been defined for the 45 nm complementary metal oxide semiconductor technology node, threshold voltage control and equivalent oxide thickness (EOT) scaling remain c...
- On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)
[作者:Seifarth, O; Dabrowski, J; Zaumseil, P; Muller, S; Schmeisser, D; Mussig, HJ; Schroeder, T,期刊:Journal Of Vacuum Science & Technology B, 页码:271-276 , 文章类型: Article,,卷期:2009年27-1]
- The influence of stoichiometry and crystal structure on the electronic properties of single crystalline cubic PrO2(111), cubic Pr2O3(111), and hexagonal Pr2O3(0001) thin film heterostructures on Si(111) was investigated ...
- Influence of the electrode material on HfO2 metal-insulator-metal capacitors
[作者:Wenger, C; Lukosius, M; Mussig, HJ; Ruhl, G; Pasko, S; Lohe, C,期刊:Journal Of Vacuum Science & Technology B, 页码:286-289 , 文章类型: Article,,卷期:2009年27-1]
- TaN and TiN are investigated as bottom electrode materials for metal-insulator-metal (MIM) capacitor applications. Atomic vapor deposited HfO2 films are used as high-k dielectric. The influence of the interfacial layer b...
- Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems
[作者:Borschel, C; Ronning, C; Hofsass, H; Giussani, A; Zaumseil, P; Wenger, C; Storck, P; Schroeder, T,期刊:Journal Of Vacuum Science & Technology B, 页码:305-309 , 文章类型: Article,,卷期:2009年27-1]
- Single crystalline epitaxial Si(111)/Y2O3(111)/Si(111) heterostructures were grown by molecular beam epitaxy and the morphology, structure, and defects were characterized in detail. The growth of a closed and smooth laye...
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