- Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design
[作者:Raffo, A; Vadala, V; Schreurs, DMMP; Crupi, G; Avolio, G; Caddemi, A; Vannini, G,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:710-718 , 文章类型: Article,,卷期:2010年58-4]
- This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is qui...
- Accurate EM-Based Modeling of Cascode FETs
[作者:Resca, D; Lonac, JA; Cignani, R; Raffo, A; Santarelli, A; Vannini, G; Filicori, F,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:719-729 , 文章类型: Article,,卷期:2010年58-4]
- Cascode field-effect transistors (FETs) are widely used in the design of monolithic microwave integrated circuits (MMICs), owing to their almost unilateral and broadband behavior. However, since a dedicated model of the ...
- Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
[作者:Wang, SC; Su, P; Chen, KM; Liao, KH; Chen, BY; Huang, SY; Hung, CC; Huang, GW,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:740-746 , 文章类型: Article,,卷期:2010年58-4]
- Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channe...
- A CMOS Integrated Analog Pulse Compressor for MIMO Radar Applications
[作者:Lee, SM; Song, T; Park, J; Cho, C; An, S; Lim, K; Laskar, J,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:747-756 , 文章类型: Article,,卷期:2010年58-4]
- Conventional radar pulse compressors use either surface acoustic wave devices or fast convolution processing, but both solutions have significant drawbacks. To overcome these drawbacks, an integrated analog pulse compres...
- On the Recovery Time of Highly Robust Low-Noise Amplifiers
[作者:Liero, A; Dewitz, M; Kuhn, S; Chaturvedi, N; Xu, JJ; Rudolph, M,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:781-787 , 文章类型: Article,,卷期:2010年58-4]
- Recently, GaN-based low-noise amplifiers (LNAs) were shown to provide high ruggedness together with low noise figure. Since no limiter is required to protect the input, these LNAs allow for simplified receiver architectu...
- Efficiency Enhancement of Class-E Power Amplifiers at Low Drain Voltage
[作者:You, F; He, SB; Tang, XH,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:788-794 , 文章类型: Article,,卷期:2010年58-4]
- In this paper, the output power, phase response, and drain efficiency of a class-E power amplifier with shunt capacitance, composed of nonlinear and linear capacitance, is analyzed to manifest the cause of efficiency deg...
- A Resistively Degenerated Wideband Passive Mixer With Low Noise Figure and High IIP2
[作者:Kim, N; Aparin, V; Larson, LE,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:820-830 , 文章类型: Article,,卷期:2010年58-4]
- A CMOS mixer whose linearity is maintained for a wide frequency range is presented. Transconductance (G(m)) boosting methods, such as input cross-coupling, current reuse complementary input, and back gate connection, are...
- Wide-IF-Band CMOS Mixer Design
[作者:Chiang, PY; Su, CW; Luo, SY; Hu, R; Jou, CF,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:831-840 , 文章类型: Article,,卷期:2010年58-4]
- A wide-IF-band transistor mixer has been designed using a 0.13-mu m RF-CMOS process where its RF frequency is 8.7-17.4 GHz, local oscillator (LO) fixed at 17.4 GHz, and IF up to 8.7 GHz. Proper layout arrangement for the...
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