- Formative time of breakdown modeled for the ignition of air and n-butane mixtures using effective ionization coefficients - art. no. 241501
[作者:Kudryavtsev, AA; Popugaev, SD; Demidov, VI; Adams, SF; Jiao, CQ,期刊:Applied Physics Letters, 页码:41501-41501 , 文章类型: Article,,卷期:2008年93-24]
- It is shown that simulations of ignition by electric arc discharge in n-butane and air mixtures have interesting features, which deviate from results obtained by simple extension of calculations based on methanelike fuel...
- Fabrication of poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate - art. no. 241503
[作者:Nakamura, T; Kuraseko, H; Hanazawa, K; Koaizawa, H; Uraoka, Y; Fuyuki, T; Mimura, A,期刊:Applied Physics Letters, 页码:41503-41503 , 文章类型: Article,,卷期:2008年93-24]
- The continuous deposition of polycrystalline silicon film on quartz fiber by local thermal chemical deposition was investigated. High-speed deposition owing to high temperature and locality was examined using fixed and m...
- Nanobending of nanowires: A molecular dynamics study - art. no. 241901
[作者:Yan, YD; Zhang, JJ; Sun, T; Fei, WD; Liang, YC; Dong, S,期刊:Applied Physics Letters, 页码:41901-41901 , 文章类型: Article,,卷期:2008年93-24]
- Three-dimensional molecular dynamics simulations of the nanobending of copper nanowires are carried out. Simulation results show that the loading and unloading cycles of the nanobending test can reveal the full spectrum ...
- Infrared spectroscopy of the interface charge in a ZnO field-effect transistor - art. no. 241902
[作者:Kim, J; Jung, S; Choi, EJ; Kim, K; Lee, K; Im, S,期刊:Applied Physics Letters, 页码:41902-41902 , 文章类型: Article,,卷期:2008年93-24]
- We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior...
- Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric - art. no. 241905
[作者:Tsukazaki, A; Ohtomo, A; Chiba, D; Ohno, Y; Ohno, H; Kawasaki, M,期刊:Applied Physics Letters, 页码:41905-41905 , 文章类型: Article,,卷期:2008年93-24]
- A top-gate field-effect device with atomic-layer-deposited Al2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO-Mg0.12Zn0.88O double h...
- Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks - art. no. 241907
[作者:Oh, DC; Kato, T; Goto, H; Park, SH; Hanada, T; Yao, T; Kim, JJ,期刊:Applied Physics Letters, 页码:41907-41907 , 文章类型: Article,,卷期:2008年93-24]
- The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission f...
- Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5 - art. no. 241908
[作者:Sun, ZM; Zhou, J; Shin, HJ; Blomqvist, A; Ahuja, R,期刊:Applied Physics Letters, 页码:41908-41908 , 文章类型: Article,,卷期:2008年93-24]
- Nitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2Sb2Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the dope...
- Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys - art. no. 241909
[作者:Lin, YC; Chou, WC; Fan, WC; Ku, JT; Ke, FK; Wang, WJ; Yang, SL; Chen, WK; Chang, WH; Chia, CH,期刊:Applied Physics Letters, 页码:41909-41909 , 文章类型: Article,,卷期:2008年93-24]
- Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonical...
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