- Phase change random access memory featuring silicide metal contact and high-kappa interlayer for operation power reduction - art. no. 032207
[作者:Fang, LWW; Zhao, R; Lim, KG; Yang, HX; Shi, LP; Chong, TC; Yeo, YC,期刊:Journal Of Vacuum Science & Technology B, 页码:32207-32207 , 文章类型: Article,,卷期:2011年29-3]
- A phase change memory device integrated with a nickel monosilicide (NiSi) bottom electrode and a dielectric (Ta2O5) interlayer was investigated. The presence of a low thermal conductivity thin film between the bottom ele...
- Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics - art. no. 032201
[作者:Urbanowicz, AM; Vanstreels, K; Verdonck, P; Van Besien, E; Christos, T; Shamiryan, D; De Gendt, S; Baklanov, MR,期刊:Journal Of Vacuum Science & Technology B, 页码:32201-32201 , 文章类型: Article,,卷期:2011年29-3]
- The effect of narrow-band 172 nm and broad-band >200 nm UV sources in the new curing scheme of the plasma-enhanced chemical vapor deposition (PECVD) dielectrics is studied. The new curing scheme is based on porogen remov...
- Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering - art. no. 031201
[作者:Huh, MS; Won, SJ; Yang, BS; Oh, S; Oh, MS; Jeong, JK; Kim, HJ,期刊:Journal Of Vacuum Science & Technology B, 页码:31201-31201 , 文章类型: Article,,卷期:2011年29-3]
- Thin film transistors (TFTs) were fabricated with a zinc oxide (ZnO) channel deposited by ultralow-pressure sputtering (ULPS) at a pressure less than 1.3 x 10(-3) Pa. The field-effect mobility (mu(FE)) and the subthresho...
- Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy - art. no. 032202
[作者:Zhu, J; Jing, J; Luo, WB; Zhang, Y; Li, YR,期刊:Journal Of Vacuum Science & Technology B, 页码:32202-32202 , 文章类型: Article,,卷期:2011年29-3]
- Ceria (CeO2) films with fluorite structures were grown on c-axial-oriented GaN/Al2O3 substrates with and without YSZ/TiO2 double-bridge layer using pulse laser molecular beam epitaxy, respectively. The growth behavior wa...
- Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors - art. no. 032204
[作者:Liu, L; Kang, TS; Cullen, DA; Zhou, L; Kim, J; Chang, CY; Douglas, EA; Jang, S; Smith, DJ; Pearton, SJ; Johnson, WJ; Ren, F,期刊:Journal Of Vacuum Science & Technology B, 页码:32204-32204 , 文章类型: Article,,卷期:2011年29-3]
- The effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain break...
- Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching - art. no. 032210
[作者:Sugiyama, T; Ohwada, I; Nanataki, T; Moriguchi, Y; Eryu, O; Ichimura, M; Gomi, M,期刊:Journal Of Vacuum Science & Technology B, 页码:32210-32210 , 文章类型: Article,,卷期:2011年29-3]
- Pb(Mg1/3N2/3)O-3-PbZrO3-PbTiO3 (PMN-PZT) ferroelectric electron emitters with a novel electrode structures were formed by photolithography and chemical etching to investigate their electron emission characteristics. For ...
- Increasing the speed of solid-state nanopores - art. no. 032206
[作者:Waggoner, PS; Kuan, AT; Polonsky, S; Peng, HB; Rossnagel, SM,期刊:Journal Of Vacuum Science & Technology B, 页码:32206-32206 , 文章类型: Article,,卷期:2011年29-3]
- In this work, the authors studied the time response of solid-state nanopores to the applied potentials and the corresponding capacitances. They primarily examined the effect of the doping of the silicon substrates as wel...
- Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight-secondary ion mass spectrometry - art. no. 032208
[作者:Py, M; Barnes, JP; Boujamaa, R; Gros-Jean, M; Nakajima, K; Kimura, K; Roukoss, C; Pelissier, B; Gambacorti, N,期刊:Journal Of Vacuum Science & Technology B, 页码:32208-32208 , 文章类型: Article,,卷期:2011年29-3]
- Elemental concentration depth profiles of high-k material stacks for 32 nm node devices and below were acquired by high resolution backscattering spectrometry (HRBS), parallel angle resolved-x-ray photoelectron spectrosc...
- Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors - art. no. 032209
[作者:Zhang, XG; Guo, HX; Lin, HY; Cheng, CC; Ko, CH; Wann, CH; Luo, GL; Chang, CY; Chien, CH; Han, ZY; Huang, SC; Chin, HC; Gong, X; Koh, SM; Lim, PSY; Yeo, YC,期刊:Journal Of Vacuum Science & Technology B, 页码:32209-32209 , 文章类型: Article,,卷期:2011年29-3]
- The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was...
- High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm - art. no. 032211
[作者:Jun, M; Park, Y; Hyun, Y; Zyung, T; Jang, M; Choi, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:32211-32211 , 文章类型: Article,,卷期:2011年29-3]
- Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing...
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