- Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics - art. no. 011206
[作者:Shi, HL; Huang, H; Bao, JJ; Liu, JJ; Ho, PS; Zhou, YF; Pender, JT; Armacost, MD; Kyser, D,期刊:Journal Of Vacuum Science & Technology B, 页码:11206-11206 , 文章类型: Article,,卷期:2012年30-1]
- The damage induced by CO2 and O-2 plasmas to an ultra low-k (ULK) dielectric film with a dielectric constant (kappa) of 2.2 was investigated. The dielectric constant was observed to increase due to methyl depletion, mois...
- Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers - art. no. 011803
[作者:Tomita, M; Koike, M; Akutsu, H; Takeno, S; Kawamura, Y; Shimizu, Y; Uematsu, M; Itoh, KM,期刊:Journal Of Vacuum Science & Technology B, 页码:11803-11803 , 文章类型: Article,,卷期:2012年30-1]
- In order to identify their controlling factors, the depth resolution parameters for secondary ion mass spectrometry, which include the decay length and the standard deviation of the Gaussian function (also referred to as...
- Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors - art. no. 011203
[作者:Kang, TS; Wang, XT; Lo, CF; Ren, F; Pearton, SJ; Laboutin, O; Cao, Y; Johnson, JW; Kim, J,期刊:Journal Of Vacuum Science & Technology B, 页码:11203-11203 , 文章类型: Article,,卷期:2012年30-1]
- A finite element simulation was used to estimate the temperature distributions within AlGaN/GaN high electron mobility transistors (HEMTs) during the laser lift-off process. The time-dependent simulation showed that a th...
- Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate - art. no. 011202
[作者:Zheng, YY; Liu, GZ; Li, C; Huang, W; Chen, SY; Lai, HK,期刊:Journal Of Vacuum Science & Technology B, 页码:11202-11202 , 文章类型: Article,,卷期:2012年30-1]
- Thermal oxidation of silicon (Si)-capped germanium (Ge) epilayer on Si substrate is performed to study the effect of the physical interface on the electrical properties of Ge metaloxide-semiconductor capacitors. During t...
- Physical properties of individual anatase TiO2 nanowires investigated by field emission in a transmission electron microscope - art. no. 011801
[作者:Shen, J; Vincent, P; Blanchard, NP; Nicolle, J; Choueib, M; Purcell, ST; Poncharal, P; Salles, V; Brioude, A,期刊:Journal Of Vacuum Science & Technology B, 页码:11801-11801 , 文章类型: Article,,卷期:2012年30-1]
- The authors present studies on the field emission (FE) mechanism and the FE-induced transformation of individual anatase TiO2 nanowires (NWs). The NWs were synthesized by electrospinning followed by calcination at 500 de...
- Self-aligned patterning on a flexible substrate using a dual-tone, thermally activated photoresist - art. no. 011603
[作者:Jen, WLK; Rawlings, BM; Strahan, JR; Hellebusch, DJ; Durand, WJ; Willson, CG,期刊:Journal Of Vacuum Science & Technology B, 页码:11603-11603 , 文章类型: Article,,卷期:2012年30-1]
- The fabrication of electronic devices on flexible substrates represents an opportunity for the development of flexible display technologies, large area devices, and roll-to-roll manufacturing processes. Traditional photo...
- Multi-phase model for reflection anisotropy spectra of copper phthalocyanine films on anisotropic silicon substrates - art. no. 012401
[作者:Seidel, F; Ding, L; Gordan, OD; Zahn, DRT,期刊:Journal Of Vacuum Science & Technology B, 页码:12401-12401 , 文章类型: Article,,卷期:2012年30-1]
- Reflection anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) have extensively been applied to inorganic and organic structures and, because of the similarity of these two techniques, the evaluation proced...
- Nanofabrication of doped, complex oxides - art. no. 011804
[作者:Waller, GH; Stein, A; Abiade, JT,期刊:Journal Of Vacuum Science & Technology B, 页码:11804-11804 , 文章类型: Article,,卷期:2012年30-1]
- Complex oxides have many promising attributes, including wide band gaps for high temperature semiconductors, ion conducting electrolytes in fuel cells, ferroelectricity and ferromagnetism. Bulk and thin film oxides can b...
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