- Refractive index dispersion deduced from lasing modes in ZnO microtetrapods
[作者:Ursaki, VV; Zalamai, VV; Tiginyanu, IM; Burlacu, A; Rusu, EV; Klingshirn, C,期刊:Applied Physics Letters, 页码:171101-171101 , 文章类型: Article,,卷期:2009年95-17]
- High optical quality, well end leg faceted ZnO microtetrapods sustaining lasing modes with quality factors of 2500-3000 have been grown by carbothermal chemical vapor deposition. It is shown that lasing is due to longitu...
- Influence of GeSi interfacial layer on Ge-Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals
[作者:Liu, LZ; Gao, F; Wu, XL; Li, TH; Chu, PK,期刊:Applied Physics Letters, 页码:171105-171105 , 文章类型: Article,,卷期:2009年95-17]
- The Ge-Ge optical phonon peak at 300 cm(-1) acquired from amorphous SiO2 films embedded with Ge nanocrystals by Raman scattering is sensitive to the Si content. When the Si concentration is high, a thin GeSi interfacial ...
- Experimental observation of subluminal and superluminal light propagation in rhodamine 6G-doped polymethyl methacrylate
[作者:Zhang, WD; Gao, F; Zhang, GQ; Li, W; Zhang, XZ; Xu, JJ,期刊:Applied Physics Letters, 页码:171106-171106 , 文章类型: Article,,卷期:2009年95-17]
- Nondegenerate two-wave coupling process and group velocity change in the paraxial part of an intensity-modulated and focused transverse electromagnetic beam (TEM00 beam in the article) was observed in the rhodamine 6G(R6...
- Soliton source generation in a few-mode tellurite microstructure fiber
[作者:Yan, X; Qin, GS; Liao, MS; Suzuki, T; Mori, A; Ohishi, Y,期刊:Applied Physics Letters, 页码:171107-171107 , 文章类型: Article,,卷期:2009年95-17]
- We report broad near-infrared soliton and associated dispersive wave source generation (1228-1867 nm) and tunable green third harmonic generation (528-542 nm) by LP11 mode excitation in a few-mode tellurite microstructur...
- Pulsed-laser printing of organic thin-film transistors
[作者:Rapp, L; Diallo, AK; Alloncle, AP; Videlot-Ackermann, C; Fages, F; Delaporte, P,期刊:Applied Physics Letters, 页码:171109-171109 , 文章类型: Article,,卷期:2009年95-17]
- Organic thin-film transistors have been fabricated using laser-induced forward transfer as spatially resolved laser-printing method. Using this technique, source and drain electrodes were deposited from silver nanopartic...
- All-optical phase modulations in a silicon wire waveguide at ultralow light levels
[作者:Matsuda, N; Shimizu, R; Mitsumori, Y; Kosaka, H; Sato, A; Yokoyama, H; Yamada, K; Watanabe, T; Tsuchizawa, T; Fukuda, H; Itabashi, S; Edamatsu, K,期刊:Applied Physics Letters, 页码:171110-171110 , 文章类型: Article,,卷期:2009年95-17]
- Cross-phase modulation (XPM) in a silicon wire waveguide at 1.55 mu m telecom band was studied down to ultralow light levels. In the low-power regime, we found that free-carrier dispersion as well as the optical Kerr eff...
- Switchable fluorescent liquid crystals
[作者:Salamonczyk, M; Kovarova, A; Svoboda, J; Pociecha, D; Gorecka, E,期刊:Applied Physics Letters, 页码:171901-171901 , 文章类型: Article,,卷期:2009年95-17]
- Properties of new fluorescent, mesogenic compounds bearing [2]benzothiophene moiety are presented. Materials show strong fluorescence of green or red light with quantum yield up to 30%, in liquid crystalline phases the e...
- Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots
[作者:Jang, YD; Park, J; Lee, D; Mowbray, DJ; Skolnick, MS; Liu, HY; Hopkinson, M; Hogg, RA,期刊:Applied Physics Letters, 页码:171902-171902 , 文章类型: Article,,卷期:2009年95-17]
- Modulation-doped InAs/GaAs quantum dots (QDs) show bright photoluminescence (PL) at 300 K, linear increase of PL intensity on excitation at 300 K and rather temperature insensitive PL intensity and carrier lifetime, in c...
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