- Simultaneous self-collimation of fundamental and second-harmonic in sonic crystals - art. no. 151905
[作者:Soliveres, E; Perez-Arjona, I; Pico, R; Espinosa, V; Sanchez-Morcillo, VJ; Staliunas, K,期刊:Applied Physics Letters, 页码:51905-51905 , 文章类型: Article,,卷期:2011年99-15]
- Simultaneous self-collimation of sound beams with different frequencies, corresponding to fundamental wave and to its second harmonic, is proposed theoretically and demonstrated experimentally. The result is obtained whe...
- Effect of carbon doping on the structure of amorphous GeTe phase change material - art. no. 151906
[作者:Ghezzi, GE; Raty, JY; Maitrejean, S; Roule, A; Elkaim, E; Hippert, F,期刊:Applied Physics Letters, 页码:51906-51906 , 文章类型: Article,,卷期:2011年99-15]
- Carbon-doped GeTe is a promising material for use in phase change memories since the addition of C increases the stability of the amorphous phase. By combining x-ray total scattering experiments and ab initio molecular d...
- Raman study on the interlayer interactions and the band structure of bilayer graphene synthesized by alcohol chemical vapor deposition - art. no. 151916
[作者:Okano, M; Matsunaga, R; Matsuda, K; Masubuchi, S; Machida, T; Kanemitsu, Y,期刊:Applied Physics Letters, 页码:51916-51916 , 文章类型: Article,,卷期:2011年99-15]
- We investigated the electronic band structure and interlayer interactions in graphene synthesized by alcohol-chemical vapor deposition (a-CVD) using microprobe Raman spectroscopy and tight-binding band-structure calculat...
- Epitaxial oxide growth on polar (111) surfaces - art. no. 151917
[作者:Blok, JL; Wan, X; Koster, G; Blank, DHA; Rijnders, G,期刊:Applied Physics Letters, 页码:51917-51917 , 文章类型: Article,,卷期:2011年99-15]
- Obtaining-atomically smooth surfaces and interfaces of perovskite oxide materials on polar (111) surfaces presents a particular challenge as these surfaces and interfaces will reconstruct. Here, the effect of the use of ...
- Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition - art. no. 152103
[作者:Vincent, B; Gencarelli, F; Bender, H; Merckling, C; Douhard, B; Petersen, DH; Hansen, O; Henrichsen, HH; Meersschaut, J; Vandervorst, W; Heyns, M; Loo, R; Caymax, M,期刊:Applied Physics Letters, 页码:52103-52103 , 文章类型: Article,,卷期:2011年99-15]
- In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn l...
- Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds - art. no. 152104
[作者:Wimmer, M; Bar, M; Gerlach, D; Wilks, RG; Scherf, S; Lupulescu, C; Ruske, F; Felix, R; Hupkes, J; Gavrila, G; Gorgoi, M; Lips, K; Eberhardt, W; Rech, B,期刊:Applied Physics Letters, 页码:52104-52104 , 文章类型: Article,,卷期:2011年99-15]
- The chemical structure of the interface between silicon thin films and the transparent conductive oxide ZnO:Al has been investigated by hard x-ray photoelectron spectroscopy. By varying the excitation energy between 2010...
- Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films - art. no. 152105
[作者:Tominaga, J; Simpson, RE; Fons, P; Kolobov, AV,期刊:Applied Physics Letters, 页码:52105-52105 , 文章类型: Article,,卷期:2011年99-15]
- Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolit...
- Defect detection in nano-scale transistors based on radio-frequency reflectometry - art. no. 152106
[作者:Villis, BJ; Orlov, AO; Jehl, X; Snider, GL; Fay, P; Sanquer, M,期刊:Applied Physics Letters, 页码:52106-52106 , 文章类型: Article,,卷期:2011年99-15]
- Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-p...
- Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T=180 K - art. no. 152107
[作者:de Sousa, JS; Detz, H; Klang, P; Gornik, E; Strasser, G; Smoliner, J,期刊:Applied Physics Letters, 页码:52107-52107 , 文章类型: Article,,卷期:2011年99-15]
- A huge Rashba splitting enhanced by an in-plane magnetic field is observed in non-magnetic InGaAs resonant tunneling diodes with GaAsSb barriers. At T = 4 K, the current resonances split by the Rashba effect reveal peak ...
- Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor - art. no. 152108
[作者:Yu, JW; Li, CK; Chen, CY; Wu, YR; Chou, LJ; Peng, LH,期刊:Applied Physics Letters, 页码:52108-52108 , 文章类型: Article,,卷期:2011年99-15]
- We investigated the transport properties of [11 (2) over bar0]-gallium nitride (GaN)/gallium oxide (Ga2O3) single nanowire metal-oxide-semiconductor field-effect-transistor grown on (0001) sapphire substrates. With 0.1 m...
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