- A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage
[作者:Mukhopadhyay, D; Dong, J; Pengwang, E; Ferreira, P,期刊:Sensors And Actuators A-Physical, 页码:340-351 , 文章类型: Article,,卷期:2008年147-1]
- This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XY theta) stage. The design of the proposed MEMS (mic...
- Determining soil physical properties by multi-sensor technique
[作者:Sun, YR; Lammers, PS; Ma, DK; Lin, JH; Zeng, QM,期刊:Sensors And Actuators A-Physical, 页码:352-357 , 文章类型: Article,,卷期:2008年147-1]
- Plant growth and crop yield can be significantly impeded by a number of soil physical parameters including soil water content, mechanical strength and soil electrical conductivity (EC). Therefore, to simultaneously measu...
- Fibre Bragg gratings in structural health monitoring - Present status and applications
[作者:Majumder, M; Gangopadhyay, TK; Chakraborty, AK; Dasgupta, K; Bhattacharya, DK,期刊:Sensors And Actuators A-Physical, 页码:150-164 , 文章类型: Review,,卷期:2008年147-1]
- In-service structural health monitoring (SHM) of engineering Structures has assumed a significant role ill assessing their safety and integrity. Fibre Bragg grating (FBG) sensors have emerged as a reliable. in situ, non-...
- GaNUV MSM photodetector on porous beta-SiC/(111)Si substrates
[作者:Chang, SH; Fang, YK; Hsu, KC; Wei, TC,期刊:Sensors And Actuators A-Physical, 页码:1-5 , 文章类型: Article,,卷期:2008年147-1]
- This paper reports the GaN thin films grown on Si Substrates by MOCVD with different buffer layers, i.e., Cubic beta-SiC and porous beta-SiC (PSC). The beta-SiC thin films were prepared with RTCVD, while the PSC thin fil...
- Improvements of nonlinear dynamic modeling of hot-film MAF sensor
[作者:Xu, KJ; Zhang, J; Wang, XF; Teng, Q; Tan, J; Zhang, YY,期刊:Sensors And Actuators A-Physical, 页码:34-40 , 文章类型: Article,,卷期:2008年147-1]
- The operating procedure of engine requires that the mass air now (MAF) sensor can measure the Pulsation air air flow accurately. Therefore the MAF sensor must possess fast response speed. It is necessary to Study the dyn...
- First Vertical Hall Device in standard 0.35 mu m CMOS technology
[作者:Pascal, J; Hebrard, L; Kammerer, JB; Frick, V; Blonde, JP,期刊:Sensors And Actuators A-Physical, 页码:41-46 , 文章类型: Article,,卷期:2008年147-1]
- In order to lower the short-circuit effect due to the measurement contacts, Vertical Hall Devices (VHDs) are generally designed either in bulky N-type silicon or in the deep N-well of high-voltage CMOS technologies. In t...
- A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications
[作者:Chou, TH; Fang, YK; Chiang, YT; Lin, CI; Yang, CY,期刊:Sensors And Actuators A-Physical, 页码:60-63 , 文章类型: Article,,卷期:2008年147-1]
- A novel n-SiCN/p-SiCN homojunction was developed on Si Substrate for low cost and high temperature ultraviolet(UV) detecting applications. The current ratio of the junction under -5V bias, with and without irradiation of...
- Studies and optimization of the frequency response of a micromachined thermal accelerometer
[作者:Courteaud, J; Crespy, N; Combette, R; Sorli, B; Giani, A,期刊:Sensors And Actuators A-Physical, 页码:75-82 , 文章类型: Article,,卷期:2008年147-1]
- In the present work, the design of a micromachined thermal accelerometer based on convection effect was studied. The accelerometer sensitivity and especially the frequency response have been experimentally and numericall...
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