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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共67条记录   Bottom-up Photonic Crystal Cavities Formed by Patterned III-V Nanopillars [作者：Scofield, AC; Shapiro, JN; Lin, A; Williams, AD; Wong, PS; Liang, BL; Huffaker, DL,期刊：Nano Letters, 页码：2242-2246 , 文章类型： Article，,卷期：2011年11-6] We report on the formation and optical properties of bottom-up photonic crystal (PC) cavities formed by III-IV nanopillars (NPs) via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs sub... Large Integrated Absorption Enhancement in Plasmonic Solar Cells by Combining Metallic Gratings and Antireflection Coatings [作者：Munday, JN; Atwater, HA,期刊：Nano Letters, 页码：2195-2201 , 文章类型： Article，,卷期：2011年11-6] We describe an ultrathin solar cell architecture that combines the benefits of both plasmonic photovoltaics and traditional antireflection coatings. Spatially resolved electron generation rates are used to determine the ... Enhancing Oxide Ion Incorporation Kinetics by Nanoscale Yttria-Doped Ceria interlayers [作者：Fan, Z; Prinz, FB,期刊：Nano Letters, 页码：2202-2205 , 文章类型： Article，,卷期：2011年11-6] Interlayering 17.5 nm of Yttria-doped ceria (YDC) thin films between bulk yttria-stabilized-zirconia electrolyte and a porous Pt cathode enhanced the performance of low-temperature solid oxide fuel cells. The added YDC i... Thermal Conductivity of Nanocrystalline Silicon: Importance of Grain Size and Frequency-Dependent Mean Free Paths [作者：Wang, ZJ; Alaniz, JE; Jang, WY; Garay, JE; Dames, C,期刊：Nano Letters, 页码：2206-2213 , 文章类型： Article，,卷期：2011年11-6] The thermal conductivity reduction due to grain boundary scattering is widely interpreted using a scattering length assumed equal to the grain size and independent of the phonon frequency (gray). To assess these assumpti... Hybrid Si Nanowire/Amorphous Silicon FETs for Large-Area Image Sensor Arrays [作者：Wong, WS; Raychaudhuri, S; Lujan, R; Sambandan, S; Street, RA,期刊：Nano Letters, 页码：2214-2218 , 文章类型： Article，,卷期：2011年11-6] Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin... Locally Oxidized Silicon Surface-Plasmon Schottky Detector for Telecom Regime [作者：Goykhman, I; Desiatov, B; Khurgin, J; Shappir, J; Levy, U,期刊：Nano Letters, 页码：2219-2224 , 文章类型： Article，,卷期：2011年11-6] We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligne... Power Factor Enhancement by Modulation Doping in Bulk Nanocomposites [作者：Zebarjadi, M; Joshi, G; Zhu, GH; Yu, B; Minnich, A; Lan, YC; Wang, XW; Dresselhaus, M; Ren, ZF; Chen, G,期刊：Nano Letters, 页码：2225-2230 , 文章类型： Article，,卷期：2011年11-6] We introduce the concept of modulation doping in three-dimensional nanostructured bulk materials to increase the thermoelectric figure of merit. Modulation-doped samples are made of two types of nanograins (a two-phase c... Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy [作者：Decker, R; Wang, Y; Brar, VW; Regan, W; Tsai, HZ; Wu, Q; Gannett, W; Zettl, A; Crommie, MF,期刊：Nano Letters, 页码：2291-2295 , 文章类型： Article，,卷期：2011年11-6] The use of boron nitride (BN) as a substrate for graphene nanodevices has attracted much interest since the recent report that BN greatly improves the mobility of charge carriers in graphene compared to standard SiO2 sub... Unambiguous One-Molecule Conductance Measurements under Ambient Conditions [作者：Leary, E; Gonzalez, MT; van der Pol, C; Bryce, MR; Filippone, S; Martin, N; Rubio-Bollinger, G; Agrait, N,期刊：Nano Letters, 页码：2236-2241 , 文章类型： Article，,卷期：2011年11-6] One of the challenging goals of molecular electronics is to wire exactly one molecule between two electrodes. This is generally nontrivial under ambient conditions. We describe a new and straightforward protocol for unam... Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires [作者：Wallentin, J; Mergenthaler, K; Ek, M; Wallenberg, LR; Samuelson, L; Deppert, K; Pistol, ME; Borgstrom, MT,期刊：Nano Letters, 页码：2286-2290 , 文章类型： Article，,卷期：2011年11-6] We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc b... Atomic-Scale Electron-Beam Sculpting of Near-Defect-Free Graphene Nanostructures [作者：Song, B; Schneider, GF; Xu, Q; Pandraud, G; Dekker, C; Zandbergen, H,期刊：Nano Letters, 页码：2247-2250 , 文章类型： Article，,卷期：2011年11-6] In order to harvest the many promising properties of graphene in (electronic) applications, a technique is required to cut, shape, or sculpt the material on the nanoscale without inducing damage to its atomic structure, ... Ultrafast Electrochemical Lithiation of Individual Si Nanowire Anodes [作者：Liu, XH; Zhang, LQ; Zhong, L; Liu, Y; Zheng, H; Wang, JW; Cho, JH; Dayeh, SA; Picraux, ST; Sullivan, JP; Mao, SX; Ye, ZZ; Huang, JY,期刊：Nano Letters, 页码：2251-2258 , 文章类型： Article，,卷期：2011年11-6] Using advanced in situ transmission electron microscopy, we show that the addition of a carbon coating combined with heavy doping leads to record-high charging rates in silicon nanowires. The carbon coating and phosphoru... Softened Elastic Response and Unzipping in Chemical Vapor Deposition Graphene Membranes [作者：Ruiz-Vargas, CS; Zhuang, HLL; Huang, PY; van der Zande, AM; Garg, S; McEuen, PL; Muller, DA; Hennig, RG; Park, J,期刊：Nano Letters, 页码：2259-2263 , 文章类型： Article，,卷期：2011年11-6] We use atomic force microscopy to image grain boundaries and ripples in graphene membranes obtained by chemical vapor deposition. Nanoindentation measurements reveal that out-of-plane ripples effectively soften graphene'... Focal Complex Maturation and Bridging on 200 nm Vitronectin but Not Fibronectin Patches Reveal Different Mechanisms of Focal Adhesion Formation [作者：Malmstrom, J; Lovmand, J; Kristensen, S; Sundh, M; Duch, M; Sutherland, DS,期刊：Nano Letters, 页码：2264-2271 , 文章类型： Article，,卷期：2011年11-6] The effects of protein type and pattern size on cell adhesion, spreading, and focal adhesion development are studied. Fibronectin and vitronectin patterns from 0.1 to 3 mu m produced by colloidal lithography reveal impor... A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium [作者：Scappucci, G; Capellini, G; Johnston, B; Klesse, WM; Miwa, JA; Simmons, MY,期刊：Nano Letters, 页码：2272-2279 , 文章类型： Article，,卷期：2011年11-6] Despite the rapidly growing interest in Ge for ultrascaled classical transistors and innovative quantum devices, the field, of Ge nanoelectronics is still in its infancy. One major hurdle has been electron confinement si... Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting Stamps [作者：Vasko, SE; Kapetanovic, A; Talla, V; Brasino, MD; Zhu, ZH; Scholl, A; Torrey, JD; Rolandi, M,期刊：Nano Letters, 页码：2386-2389 , 文章类型： Article，,卷期：2011年11-6] Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement contr...