- Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell - art. no. 243504
[作者:Popov, VV; Fateev, DV; Otsuji, T; Meziani, YM; Coquillat, D; Knap, W,期刊:Applied Physics Letters, 页码:43504-43504 , 文章类型: Article,,卷期:2011年99-24]
- Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovolt...
- Temperature-induced anomalous brittle-to-ductile transition of bulk metallic glasses - art. no. 241907
[作者:Pan, D; Guo, H; Zhang, W; Inoue, A; Chen, MW,期刊:Applied Physics Letters, 页码:41907-41907 , 文章类型: Article,,卷期:2011年99-24]
- We report an anomalous brittle-to-ductile transition (BTDT) in Au-based bulk metallic glasses (BMGs). Despite of brittle failure without noticeable plastic strain under uniaxial compression at room temperature, the Au-ba...
- Laser guiding plasma channel formation criterion in highly relativistic regime - art. no. 241501
[作者:Gu, YJ; Zhu, Z; Kong, Q; Li, YY; Li, XF; Chen, CY; Kawata, S,期刊:Applied Physics Letters, 页码:41501-41501 , 文章类型: Article,,卷期:2011年99-24]
- Self-formed plasma channels induced by ultra-intense and ultra-short laser pulses have been investigated with 2.5-dimensional particle-in-cell simulations. A criterion of channel formation under the highly relativistic r...
- Laser spectroscopy of individual quantum dots charged with a single hole - art. no. 243112
[作者:Gerardot, BD; Barbour, RJ; Brunner, D; Dalgarno, PA; Badolato, A; Stoltz, N; Petroff, PM; Houel, J; Warburton, RJ,期刊:Applied Physics Letters, 页码:43112-43112 , 文章类型: Article,,卷期:2011年99-24]
- We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-...
- Limited-view photoacoustic tomography utilizing backscatterers as virtual transducers - art. no. 244102
[作者:Wu, D; Wang, X; Tao, C; Liu, XJ,期刊:Applied Physics Letters, 页码:44102-44102 , 文章类型: Article,,卷期:2011年99-24]
- In photoacoustic tomography, acoustic scattering is usually considered as a nuisance, because it distorts an incident wavefront and then induces artifacts and distortion. This work demonstrates that backscatterers could ...
- Understanding electro-forming in bipolar resistive switching oxides (vol 98, 042901, 2011) - art. no. 249902
[作者:Gomez-Marlasca, F; Ghenzi, N; Rozenberg, MJ; Levy, P,期刊:Applied Physics Letters, 页码:49902-49902 , 文章类型: Correction,,卷期:2011年99-24]
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- Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO2 film near the metal-insulator transition region - art. no. 241903
[作者:Li, WW; Yu, Q; Liang, JR; Jiang, K; Hu, ZG; Liu, J; Chen, HD; Chu, JH,期刊:Applied Physics Letters, 页码:41903-41903 , 文章类型: Article,,卷期:2011年99-24]
- Transmittance spectra of (011) vanadium dioxide (VO2) film have been studied in the temperature range of 45-80 degrees C. Owing to increasing carrier concentration, the near-infrared extinction coefficient and optical co...
- Low-temperature treatment of semiconducting interlayers for high-efficiency light-emitting diodes based on a green-emitting polyfluorene derivative - art. no. 243305
[作者:Lazzerini, GM; Di Stasio, F; Flechon, C; Caruana, DJ; Cacialli, F,期刊:Applied Physics Letters, 页码:43305-43305 , 文章类型: Article,,卷期:2011年99-24]
- We investigate the scope for low-temperature treatment of exciton/electron blocking interlayers in light-emitting diodes based on poly(9,9'-dioctylfiuorene-alt-benzothiadiazole) (F8BT). We focus on poly(9,9'-dioctylfluor...
- Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film - art. no. 242105
[作者:Han, S; Zhang, ZZ; Zhang, JY; Wang, LK; Zheng, J; Zhao, HF; Zhang, YC; Jiang, MM; Wang, SP; Zhao, DX; Shan, CX; Li, BH; Shen, DZ,期刊:Applied Physics Letters, 页码:42105-42105 , 文章类型: Article,,卷期:2011年99-24]
- An ultraviolet photodetector was fabricated on MgZnO thin film grown by metal-organic chemical vapor deposition. The peak response of the device centers at 238 nm and cutoff wavelength is 253 nm. The peak responsivity is...
- Room temperature ballistic transport in InSb quantum well nanodevices - art. no. 242101
[作者:Gilbertson, AM; Kormanyos, A; Buckle, PD; Fearn, M; Ashley, T; Lambert, CJ; Solin, SA; Cohen, LF,期刊:Applied Physics Letters, 页码:42101-42101 , 文章类型: Article,,卷期:2011年99-24]
- We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial part...
- Study of ohmic contacts to n-type Ge: Snowplow and laser activation - art. no. 242104
[作者:Firrincieli, A; Martens, K; Rooyackers, R; Vincent, B; Rosseel, E; Simoen, E; Geypen, J; Bender, H; Claeys, C; Kittl, JA,期刊:Applied Physics Letters, 页码:42104-42104 , 文章类型: Article,,卷期:2011年99-24]
- Typical contacts to n-Ge result in high specific contact resistivity (rho(C)) or rectifying behaviour due to Fermi level pinning (resulting in high barrier heights) and low dopant activation generally observed for n-Ge. ...
- Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions (vol 99, 193504, 2011) - art. no. 249903
[作者:Ganguly, S; Verma, J; Li, GW; Zimmermann, T; Xing, HL; Jena, D,期刊:Applied Physics Letters, 页码:49903-49903 , 文章类型: Correction,,卷期:2011年99-24]
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