- Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric - art. no. 040601
[作者:Xue, F; Zhao, H; Chen, YT; Wang, YZ; Zhou, F; Lee, JC,期刊:Journal Of Vacuum Science & Technology B, 页码:40601-40601 , 文章类型: Article,,卷期:2011年29-4]
- In0.53Ga0.47As and In0.7Ga0.3As surface channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic layer deposition of Al2O3 and ZrO2 have been fabricated and investigated. The device performance of...
- Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces - art. no. 040603
[作者:Burek, GJ; Hwang, Y; Carter, AD; Chobpattana, V; Law, JJM; Mitchell, WJ; Thibeault, B; Stemmer, S; Rodwell, MJW,期刊:Journal Of Vacuum Science & Technology B, 页码:40603-40603 , 文章类型: Article,,卷期:2011年29-4]
- The influence of different gate metal deposition processes on the electrical characteristics of dielectric/III-V interfaces is investigated. Al2O3 and HfO2 dielectrics are grown on In0.53Ga0.47As channels and top metal e...
- Streamlined inexpensive integration of a growth facility and scanning tunneling microscope for in-situ characterization - art. no. 041804
[作者:Xu, P; Qi, D; Barber, SD; Cook, CT; Ackerman, ML; Thibado, PM,期刊:Journal Of Vacuum Science & Technology B, 页码:41804-41804 , 文章类型: Article,,卷期:2011年29-4]
- The integration of a scanning tunneling microscope chamber with a sample growth facility using non-custom, commercially available parts is described. The facility also features a newly designed magnetic wobble stick to i...
- Electrical and thermal characterization of carbon nanotube films - art. no. 041805
[作者:Gaillard, M; Mbitsi, H; Petit, A; Amin-Chalhoub, E; Boulmer-Leborgne, C; Semmar, N; Millon, E; Mathias, J; Kouassi, S,期刊:Journal Of Vacuum Science & Technology B, 页码:41805-41805 , 文章类型: Article,,卷期:2011年29-4]
- The remarkable electrical and thermal properties of carbon nanotubes (CNTs) make them attractive for microelectronics applications and, in particular, for interconnects. A multilayer device was designed in order to measu...
- Controlled formation of atomic step morphology on micropatterned Si (100) - art. no. 041806
[作者:Li, K; Pradeep, N; Chikkamaranahalli, S; Stan, G; Attota, R; Fu, J; Silver, R,期刊:Journal Of Vacuum Science & Technology B, 页码:41806-41806 , 文章类型: Article,,卷期:2011年29-4]
- Micrometer scale features are fabricated on Si (100) surfaces using lithographic techniques and thermally processed in an ultrahigh vacuum (UHV) environment. The process results in the formation of symmetric, step-terrac...
- Correlation of Raman, electrical, and optical properties of high-kappa, atomic layer deposited Al-doped TiO2 - art. no. 041807
[作者:Haspert, LC; Banerjee, P; Henn-Lecordier, L; Rubloff, GW,期刊:Journal Of Vacuum Science & Technology B, 页码:41807-41807 , 文章类型: Article,,卷期:2011年29-4]
- Electrical characteristics of 25 nm Al-doped TiO2 (ATO) dielectric films are investigated in an effort to access the benefits of TiO2's high dielectric constant (kappa) while minimizing leakage current as needed for nano...
- Developing Ni-Al and Ru-Al intermetallic films for use in microelectromechanical systems - art. no. 042002
[作者:Howell, JA; Mohney, SE; Muhlstein, CL,期刊:Journal Of Vacuum Science & Technology B, 页码:42002-42002 , 文章类型: Article,,卷期:2011年29-4]
- Ordered intermetallic films have a favorable combination of properties such as high strength, metallic electrical conductivity, good oxidation and corrosion resistance, and a high melting temperature and thermal stabilit...
- Deep traps and thermal measurements on AlGaN/GaN on Si transistors - art. no. 042201
[作者:Lo, CF; Ren, F; Pearton, SJ; Polyakov, AY; Smirnov, NB; Govorkov, AV; Belogorokhov, IA; Belogorokhov, AI; Reznik, VY; Johnson, JW,期刊:Journal Of Vacuum Science & Technology B, 页码:42201-42201 , 文章类型: Article,,卷期:2011年29-4]
- AlGaN/GaN structures grown on Si substrates by metal organic chemical vapor deposition have been processed into high power transistors with maximum input power density of 12 W/mm. The transistor showed low concentration ...
- Enhanced field emission from carbon nanotubes by electroplating of silver nanoparticles - art. no. 041003
[作者:Chen, LF; Mi, YH; Ni, HL; Ji, ZG; Xi, JH; Pi, XD; Zhao, HF,期刊:Journal Of Vacuum Science & Technology B, 页码:41003-41003 , 文章类型: Article,,卷期:2011年29-4]
- The authors report that the field emission of carbon nanotubes (CNTs) is significantly improved by electroplating. The electroplating leads to a decrease of the turn-on electric field from 2.95 to 1.0 V/mu m and an incre...
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