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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共95条记录   Time-resolved amplified spontaneous emission in quantum dots [作者：Gomis-Bresco, J; Dommers-Volkel, S; Schops, O; Kaptan, Y; Dyatlova, O; Bimberg, D; Woggon, U,期刊：Applied Physics Letters, 页码：251106-251106 , 文章类型： Article，,卷期：2010年97-25] In time-resolved experiments at InGaAs/GaAs quantum-dots-in-a-well (DWELL) semiconductor optical amplifiers, pump-probe of the ground state (GS) population, and complementary measurement of the amplified spontaneous emis... Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes [作者：Bhattacharya, P; Zhang, M; Hinckley, J,期刊：Applied Physics Letters, 页码：251107-251107 , 文章类型： Article，,卷期：2010年97-25] Hole tunnel injection is incorporated in the design of In0.25Ga0.75N/GaN quantum dot light-emitting diodes with peak emission at lambda similar to 500 nm. Calculations show that cold holes are uniformly injected into all... Emission of cylindrical and elliptical vector beams from radial Bragg Lasers [作者：Weiss, O; Scheuer, J,期刊：Applied Physics Letters, 页码：251108-251108 , 文章类型： Article，,卷期：2010年97-25] Radially and azimuthally polarized beams are shown to be naturally emitted from radial Bragg lasers depending on the supported polarization in the cavity (TE or TM). The impact of structure imperfection and deviation fro... High slope efficiency liquid crystal lasers [作者：Mowatt, C; Morris, SM; Wilkinson, TD; Colesa, HJ,期刊：Applied Physics Letters, 页码：251109-251109 , 文章类型： Article，,卷期：2010年97-25] In this letter, we demonstrate high slope efficiency laser emission from reflective liquid crystal laser devices with a silicon backplane. Three different cell architectures were fabricated and each resulting laser devic... Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes [作者：Malyutenko, VK; Bolgov, SS; Podoltsev, AD,期刊：Applied Physics Letters, 页码：251110-251110 , 文章类型： Article，,卷期：2010年97-25] By examining two types of lateral InGaN/GaN light emitting diodes with different contact patterns, we demonstrate that in the intermediate range of current where the space-charge region dominates in the device performanc... Organic-inorganic magnetic tunnel heterojunctions based on dithiapyrannylidene ultrathin films grown on Fe3O4(111) [作者：Berny, S; Tortech, L; Fichou, D; Matzen, S; Moussy, JB,期刊：Applied Physics Letters, 页码：253303-253303 , 文章类型： Article，,卷期：2010年97-25] We report on the morphology, transport, and magnetic properties of ultrathin films of 4,4'-bis(diphenyl-2,6-thiapyrannylidene) (DITPY-Ph-4), a planar quinoid organic compound with potential applications in electronics. A... High-performance optoelectrical dual-mode memory based on spiropyran-containing polyimide [作者：Liu, QS; Jiang, KJ; Wen, YQ; Wang, JX; Luo, J; Song, YL,期刊：Applied Physics Letters, 页码：253304-253304 , 文章类型： Article，,卷期：2010年97-25] A thermally stable polyimide (PI-SP) was designed as a functional material for the fabrication of memory device, and its optoelectrical dual-mode memory was studied. In an Al/PI-SP/Al device, the memory can be switched o... Quantification of energy loss mechanisms in organic light-emitting diodes [作者：Meerheim, R; Furno, M; Hofmann, S; Lussem, B; Leo, K,期刊：Applied Physics Letters, 页码：253305-253305 , 文章类型： Article，,卷期：2010年97-25] The external quantum efficiency of organic light-emitting diodes (OLEDs) is limited by several loss mechanisms. By applying a numerical model for the efficiency analysis of OLED devices, we analyze the distribution of th... Improvement of power conversion efficiency of phthalocyanine/C-60 heterojunction solar cells by inserting a lithium phthalocyanine layer at the indium-tin oxide/phthalocyanine interface [作者：Tanaka, S; Hanada, T; Ono, K; Watanabe, K; Yoshino, K; Hiromitsu, I,期刊：Applied Physics Letters, 页码：253306-253306 , 文章类型： Article，,卷期：2010年97-25] Improvement of power conversion efficiency of a zinc phthalocyanine (ZnPc)/C-60 heterojunction solar cell was achieved by inserting a lithium phthalocyanine (LiPc) layer at the indium-tin oxide (ITO)/ZnPc interface. The ... Solution processed inverted tandem polymer solar cells with self-assembled monolayer modified interfacial layers [作者：Hau, SK; Yip, HL; Chen, KS; Zou, JY; Jen, AKY,期刊：Applied Physics Letters, 页码：253307-253307 , 文章类型： Article，,卷期：2010年97-25] Inverted tandem bulk-heterojunction solar cells with comparable efficiency to single layer evices have been demonstrated by utilizing two thin layers (similar to 50 nm) of poly-(3-hexylthiophene):[6,6]-phenyl C-61 butyri... Direct observation of iso-frequency contour of surface modes in defective photonic crystals in real space [作者：Shi, L; Yin, HW; Zhu, XL; Liu, XH; Zi, JA,期刊：Applied Physics Letters, 页码：251111-251111 , 文章类型： Article，,卷期：2010年97-25] Direct observation of iso-frequency contours of surface modes in defective photonic crystals in real space is demonstrated in a hybrid photonic and plasmonic crystals structure with inevitable defects. The scattering pro... GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding [作者：Kawashima, S; Kawashima, T; Nagatomo, Y; Hori, Y; Iwase, H; Uchida, T; Hoshino, K; Numata, A; Uchida, M,期刊：Applied Physics Letters, 页码：251112-251112 , 文章类型： Article，,卷期：2010年97-25] We demonstrate GaN-based distributed-feedback surface-emitting lasers grown on sapphire substrates with a two-dimensional (2D) square-lattice photonic crystal (PhC) that forms a high-aspect-ratio void array (void diamete... A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement [作者：Rodriguez, JB; Cervera, C; Christol, P,期刊：Applied Physics Letters, 页码：251113-251113 , 文章类型： Article，,卷期：2010年97-25] We present a type-II superlattice period with a modified InAs to GaSb thickness ratio for midinfrared detection. In this kind of structure, the large electron-hole wave-function overlap and the low intrinsic carrier conc... Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer [作者：Chang, SP; Wang, CH; Chiu, CH; Li, JC; Lu, YS; Li, ZY; Yang, HC; Kuo, HC; Lu, TC; Wang, SC,期刊：Applied Physics Letters, 页码：251114-251114 , 文章类型： Article，,卷期：2010年97-25] We have studied the characteristics of efficiency droop in GaN-based light emitting diodes (LEDs) with different kinds of insertion layers (ILs) between the multiple quantum wells (MQWs) layer and n-GaN layer. By using l... Top-emitting organic light-emitting diodes: Influence of cavity design [作者：Hofmann, S; Thomschke, M; Freitag, P; Furno, M; Lussem, B; Leo, K,期刊：Applied Physics Letters, 页码：253308-253308 , 文章类型： Article，,卷期：2010年97-25] We report on red top-emitting organic light-emitting diode structures with higher order cavities. The emission zone is placed in the first, second, and third antinodes of the electric field in the cavity by increasing th... The vertically stacked organic sensor-transistor on a flexible substrate [作者：Jeong, SW; Jeong, JW; Chang, S; Kang, SY; Cho, KI; Ju, BK,期刊：Applied Physics Letters, 页码：253309-253309 , 文章类型： Article，,卷期：2010年97-25] The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/phenyl-C-61-butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction poly...