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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共87条记录   Terahertz intersubband absorption in GaN/AlGaN step quantum wells [作者：Machhadani, H; Kotsar, Y; Sakr, S; Tchernycheva, M; Colombelli, R; Mangeney, J; Bellet-Amalric, E; Sarigiannidou, E; Monroy, E; Julien, FH,期刊：Applied Physics Letters, 页码：191101-191101 , 文章类型： Article，,卷期：2010年97-19] We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (lambda approximate to 143 mu m) and 4.2 THz (lambda approximate to 70 mu m) in nitride-based semiconductor quantum wells. The structures consis... Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal [作者：Zhong, YC; Yue, ZN; Wong, GKL; Xi, YY; Hsu, YF; Djurisic, AB; Dong, JW; Chen, WJ; Wong, KS,期刊：Applied Physics Letters, 页码：191102-191102 , 文章类型： Article，,卷期：2010年97-19] ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmissio... AlGaN solar-blind avalanche photodiodes with high multiplication gain [作者：Sun, L; Chen, JL; Li, JF; Jiang, H,期刊：Applied Physics Letters, 页码：191103-191103 , 文章类型： Article，,卷期：2010年97-19] We report the fabrication and characterization of the solar-blind AlGaN avalanche photodiodes grown by metal-organic chemical vapor deposition on c-plane sapphire substrate. The fabricated devices with 100 mu m diameter ... Enhancement of random lasing through fluorescence resonance energy transfer and light scattering mediated by nanoparticles [作者：Wang, CS; Chen, YL; Lin, HY; Chen, YT; Chen, YF,期刊：Applied Physics Letters, 页码：191104-191104 , 文章类型： Article，,卷期：2010年97-19] A simple approach for the enhancement of random lasing based on fluorescence resonance energy transfer and light scattering mediated by nanoparticles is reported. To illustrate our working principle, ZnO nanorods decorat... Electroluminescence from AlN nanowires grown on p-SiC substrate [作者：Yang, HY; Yu, SF; Hui, YY; Lau, SP,期刊：Applied Physics Letters, 页码：191105-191105 , 文章类型： Article，,卷期：2010年97-19] Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p-type 4H-SiC substrate. W... Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy [作者：Gradkowski, K; Sadler, TC; Mereni, LO; Dimastrodonato, V; Parbrook, PJ; Huyet, G; Pelucchi, E,期刊：Applied Physics Letters, 页码：191106-191106 , 文章类型： Article，,卷期：2010年97-19] We demonstrate a technique to monitor the defect density in capped quantum dot (QD) structures by performing an atomic force microscopy (AFM) of the final surface. Using this method we are able to correlate their density... Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators [作者：Geiser, M; Walther, C; Scalari, G; Beck, M; Fischer, M; Nevou, L; Faist, J,期刊：Applied Physics Letters, 页码：191107-191107 , 文章类型： Article，,卷期：2010年97-19] Strong light-matter coupling at room temperature in the terahertz (THz) range is demonstrated. The studied system consists of electronic intersubband transitions in AlxGa1-xAs parabolic quantum wells coupled to an electr... Zero-cell photonic crystal nanocavity laser with quantum dot gain [作者：Nomura, M; Ota, Y; Kumagai, N; Iwamoto, S; Arakawa, Y,期刊：Applied Physics Letters, 页码：191108-191108 , 文章类型： Article，,卷期：2010年97-19] We demonstrate laser oscillation in a hexagonal-lattice photonic crystal nanocavity using an InGaAs quantum dot gain material by optical pumping at 5 K. The cavity comprises a defect created by shifting several air holes... Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films [作者：Soukiassian, A; Tagantsev, A; Setter, N,期刊：Applied Physics Letters, 页码：192903-192903 , 文章类型： Article，,卷期：2010年97-19] In this manuscript we report dielectric measurements of Mg and Li doped ZnO ceramics and thin films of various compositions. We have tried to reproduce the reported ferroelectriclike behavior in doped ZnO ceramics and th... Characterization of complementary patterned metallic membranes produced simultaneously by a dual fabrication process [作者：Hao, QZ; Zeng, Y; Wang, XD; Zhao, YH; Wang, B; Chiang, IK; Werner, DH; Crespi, V; Huang, TJ,期刊：Applied Physics Letters, 页码：193101-193101 , 文章类型： Article，,卷期：2010年97-19] An efficient technique is developed to fabricate optically thin metallic films with subwavelength patterns and their complements simultaneously. By comparing the spectra of the complementary films, we show that Babinet's... Gate dependent photocurrents at a graphene p-n junction [作者：Peters, EC; Lee, EJH; Burghard, M; Kern, K,期刊：Applied Physics Letters, 页码：193102-193102 , 文章类型： Article，,卷期：2010年97-19] We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was foun... Radio-frequency characteristics of graphene oxide [作者：Kim, WK; Jung, YM; Cho, JH; Kang, JY; Oh, JY; Kang, H; Lee, HJ; Kim, JH; Lee, S; Shin, HJ; Choi, JY; Lee, SY; Kim, YC; Han, IT; Kim, JM; Yook, JG; Baik, S; Jun, SC,期刊：Applied Physics Letters, 页码：193103-193103 , 文章类型： Article，,卷期：2010年97-19] We confirm graphene oxide, a two-dimensional carbon structure at the nanoscale level can be a strong candidate for high-efficient interconnector in radio-frequency range. In this paper, we investigate high frequency char... Luminescence properties of In(Zn)P alloy core/ZnS shell quantum dots [作者：Ung, TDT; Reiss, P; Nguyen, QL,期刊：Applied Physics Letters, 页码：193104-193104 , 文章类型： Article，,卷期：2010年97-19] Chemically synthesized InP/ZnS core/shell quantum dots (QDs) are studied using time-resolved photoluminescence spectroscopy and x-ray diffraction. Zinc stearate, which is added during the synthesis of the InP core, signi... Enhanced photocurrent generation from UV-laser-synthesized-single-wall-carbon-nanotubes/n-silicon hybrid planar devices [作者：Le Borgne, V; Castrucci, P; Del Gobbo, S; Scarselli, M; De Crescenzi, M; Mohamedi, M; El Khakani, MA,期刊：Applied Physics Letters, 页码：193105-193105 , 文章类型： Article，,卷期：2010年97-19] We report on the significant generation of photocurrent (PC) from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes (SWCNTs) onto n-Si substrate. These SWCNTs/n-Si hybrid dev... Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells [作者：Hu, WG; Inoue, T; Kojima, O; Kita, T,期刊：Applied Physics Letters, 页码：193106-193106 , 文章类型： Article，,卷期：2010年97-19] The effects of absorption coefficients were incorporated in a detailed balance model to analyze the intermediate-band (IB) configuration in quantum dot (QD) solar cells. Our results show that the optimum IB level, EIB, d... Mechanical stiffening, bistability, and bit operations in a microcantilever [作者：Venstra, WJ; Westra, HJR; van der Zant, HSJ,期刊：Applied Physics Letters, 页码：193107-193107 , 文章类型： Article，,卷期：2010年97-19] We investigate the nonlinear dynamics of microcantilevers. We demonstrate mechanical stiffening of the frequency response at large amplitudes, originating from the geometric nonlinearity. At strong driving the cantilever...