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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共97条记录   Si(100) surfaces in a hydrogen-based process ambient [作者：Doscher, H; Dobrich, A; Bruckner, S; Kleinschmidt, P; Hannappel, T,期刊：Applied Physics Letters, 页码：151905-151905 , 文章类型： Article，,卷期：2010年97-15] We studied the atomic surface properties of Si(100) during preparation in a (metal-organic) vapor phase epitaxy (VPE) reactor and the impact of the hydrogen ambient. Absorption lines in Fourier-transform infrared spectra... Growth kinetics and compositional analysis of silicon rich a-SiNx : H film: A soft x-ray reflectivity study [作者：Singh, SP; Modi, MH; Srivastava, P,期刊：Applied Physics Letters, 页码：151906-151906 , 文章类型： Article，,卷期：2010年97-15] We report soft x-ray reflectivity measurements near the Si L-2,L-3 absorption edge for Si-rich silicon nitride thin film obtained by Hg-sensitized photochemical vapor deposition. We demonstrate that the precise analysis ... An empirical potential for silicon under conditions of strong electronic excitation [作者：Shokeen, L; Schelling, PK,期刊：Applied Physics Letters, 页码：151907-151907 , 文章类型： Article，,卷期：2010年97-15] We present an empirical potential developed for silicon under conditions of strong electronic excitation. We show the essentially athermal nature of the melting transition when the electronic temperature is extremely hig... Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy [作者：Wang, XQ; Sun, HP; Pan, XQ,期刊：Applied Physics Letters, 页码：151908-151908 , 文章类型： Article，,卷期：2010年97-15] Epitaxial ZnO thin films were grown on nitrided (0001) sapphire substrates with an intervening GaN layer by rf-plasma-assisted molecular beam epitaxy. It was found that polarity of the ZnO epilayer could be controlled by... Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates [作者：Chen, XJ; Perillat-Merceroz, G; Sam-Giao, D; Durand, C; Eymery, J,期刊：Applied Physics Letters, 页码：151909-151909 , 文章类型： Article，,卷期：2010年97-15] The shape of c-oriented GaN nanostructures is found to be directly related to the crystal polarity. As evidenced by convergent beam electron diffraction applied to GaN nanostructures grown by metal-organic vapor phase ep... The effect of high voltage on the bend transition in Pi-cells [作者：Lee, CH; Raynes, EP; Elston, SJ,期刊：Applied Physics Letters, 页码：153501-153501 , 文章类型： Article，,卷期：2010年97-15] In Pi-cells, applying a high voltage to the initial splay state is known as the simplest method to generate the bend state quickly. It is generally assumed that the higher the applied voltage, the faster the bend transit... Mechanical-electromagnetic coupling of microwire polymer composites at microwave frequencies [作者：Qin, FX; Peng, HX; Prunier, C; Brosseau, C,期刊：Applied Physics Letters, 页码：153502-153502 , 文章类型： Article，,卷期：2010年97-15] We have fabricated a set of microwire composites with varying wire concentrations and studied their effective complex permittivity under the tensile stress at a frequency range of 1-6 GHz. It has been found that with inc... On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors [作者：Yan, DW; Lu, H; Cao, DS; Chen, DJ; Zhang, R; Zheng, YD,期刊：Applied Physics Letters, 页码：153503-153503 , 文章类型： Article，,卷期：2010年97-15] In this work, we include the polarization effect within the AlGaN barrier into calculation of the near-surface electrical field E-S underneath the Schottky contact metal which determines the field-dependent characteristi... X-ray refraction-contrast computed tomography images using dark-field imaging optics [作者：Sunaguchi, N; Yuasa, T; Huo, QK; Ichihara, S; Ando, M,期刊：Applied Physics Letters, 页码：153701-153701 , 文章类型： Article，,卷期：2010年97-15] If an x-ray beam containing internal information derived from sample soft tissue is incident upon a Laue-case analyzer, the beam will subsequently split into a forwardly diffracted beam and a separate diffracted beam. Us... Electronic transitions and hybrid resonance in InAsSb films by reflectance spectra [作者：Deng, HY; Wang, QW; He, JY; Sun, CH; Hu, SH; Chen, X; Dai, N,期刊：Applied Physics Letters, 页码：151910-151910 , 文章类型： Article，,卷期：2010年97-15] Electronic properties of InAs1-xSbx films with x up to 0.09 have been investigated by reflectance spectra in 1.5-5 eV energy range at room temperature. The real and imaginary parts of the dielectric function were derived... Direct observation of Si(111) root 7x root 7-Co structure and its local electronic structure [作者：Odagiri, M; Mochizuki, I; Shigeta, Y; Tosaka, A,期刊：Applied Physics Letters, 页码：151911-151911 , 文章类型： Article，,卷期：2010年97-15] The structure of Si (111) root 7x root 7 R19.1 degrees-Co reconstructed surface have been investigated by scanning tunneling microscopy (STM). Three proposed sites on the reconstructed surface, the Co atom site, the cap-... Near bulk semiconductor to metal transition in epitaxial VO2 thin films [作者：Gupta, A; Narayan, J; Dutta, T,期刊：Applied Physics Letters, 页码：151912-151912 , 文章类型： Article，,卷期：2010年97-15] We have been able to achieve semiconductor-to-metal transition (SMT) temperature in VO2 thin films close to the values reported for bulk VO2 single crystals. This was achieved by complete relaxation of misfit strain, whi... Toward an objective evaluation of cell transfection performance [作者：Orlando, V; Pozzi, D; Caracciolo, G; Augusti-Tocco, G; Biagioni, S,期刊：Applied Physics Letters, 页码：153702-153702 , 文章类型： Article，,卷期：2010年97-15] In this study, we considered the interplay between the efficiency and cytotoxicity of multicomponent cationic liposome/DNA complexes, in cell lines of different origin, as NIH 3T3, HEK 293T, N18TG2, and SK-N-SH. We show ... Random breakup of microdroplets for single-cell encapsulation [作者：Um, E; Lee, SG; Park, JK,期刊：Applied Physics Letters, 页码：153703-153703 , 文章类型： Article，,卷期：2010年97-15] Microfluidic droplet-based technology enables encapsulation of cells in the isolated aqueous chambers surrounded by immiscible fluid but single-cell encapsulation efficiency is usually less than 30%. In this letter, we i... A simple method to evaluate the optimal size of nanoparticles for endocytosis based on kinetic diffusion of receptors [作者：Li, XL; Xing, D,期刊：Applied Physics Letters, 页码：153704-153704 , 文章类型： Article，,卷期：2010年97-15] We have presented an analytic thermodynamic model to elucidate the mechanism of receptor-mediated endocytosis of nanoparticles (NPs) and provided a simple method to evaluate the optimal size of NPs by minimizing the kine... Estimation of proton distribution by means of three-dimensional reconstruction of prompt gamma rays [作者：Park, MS; Lee, W; Kim, JM,期刊：Applied Physics Letters, 页码：153705-153705 , 文章类型： Article，,卷期：2010年97-15] In proton therapy, the dose distribution of proton beams in the human body needs to be measured accurately. The distribution of prompt gamma rays emitted from patients during irradiation is strongly associated with the d...